GaNbased UV laser diodes for nearUV wavelength (UVA LD, 320~400nm) are widely applied in the fields such as UV curing, 3D printing and medical. In this paper, the current status and key technical challenges of GaNbased UVA LD are reviewed, and then how to solve the main challenges of stress management, efficient ptype doping in AlGaN and minimizing polarization effect in multiquantum wells are analyzed from the epitaxial growth and structural design. This will provide theoretical guidance for the epitaxial growth of the GaNbased UVA LD with high power, low threshold and long life.