Journal of Applied Optics, Volume. 44, Issue 2, 437(2023)

Characteristics of cavity tuning of half-external cavity Nd:YAG and Nd:YVO4 microchip solid-state lasers

Weiguang CHEN1... Yong DENG1 and Shulian ZHANG2,* |Show fewer author(s)
Author Affiliations
  • 1School of Mechanical Engineering, Nantong University, Nantong 226019, China
  • 2State Key Laboratory of Precision Measurement Technology and Instrumentation, Department of Precision Instrumentation, Tsinghua University, Beijing 100084, China
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    Figures & Tables(13)
    Structure diagram of experimental device
    Schematic diagram of parallel correction of microchip
    Cavity length and optical power curves of half-external cavity Nd:YVO4 laser
    Cavity length and optical power curves of half-external cavity Nd:YAG laser
    Test curves of driving voltage and output displacement
    Schematic diagram of frequency tuning
    Change of output power of half-external cavity Nd:YVO4 laser during extension (pressurization) of PZT
    Double longitudinal-mode voltage width of half-external cavity Nd:YVO4 laser at different pump currents and cavity lengths
    Double longitudinal-mode voltage width of half-external cavity Nd:YAG laser at different pump currents and cavity lengths
    Single longitudinal-mode voltage width of half-external cavity Nd:YVO4 laser at different pump currents and cavity lengths
    Single longitudinal-mode voltage width of half-external cavity Nd:YAG laser at different pump currents and cavity lengths
    • Table 1. Microchip parameters used in two groups of experiments

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      Table 1. Microchip parameters used in two groups of experiments

      实验一实验二
      材料微片:掺杂浓度3%的Nd:YVO4晶体反射镜:掺杂浓度3%的Nd:YVO4镜片微片:掺杂浓度1%的Nd:YAG晶体反射镜:掺杂浓度3%的Nd:YVO4镜片
      切割方向a-cuta-cut
      微片尺寸8×0.7 mm8×0.7 mm
      微片双面镀膜M1:高透AR-808 nm,高反HR-1064 nm,R<0.2%@808 nm,R>99.8%@1064nmM2:高透AR-1064/808 nm,R<0.2%@1064/808 nmM1:高透AR-808 nm,高反HR-1064 nm,R<0.2%@808nm,R>99.8%@1064nmM2:高透AR-1064/808 nm,R<0.2%@1064/808 nm
      反射镜镀膜M3:高反HR-1064/808 nm,R>99.8%@808 nm,R>95%@1064 nmM3:高反HR-1064/808 nm,R>99.8%@808 nm,R>95%@1064 nm
    • Table 2. Voltage range of single and double longitudinal modes during extension (pressurization) of PZT

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      Table 2. Voltage range of single and double longitudinal modes during extension (pressurization) of PZT

      电压范围/ V纵模状态
      0~19单纵模
      20~24双纵模
      25~56单纵模
      57~61双纵模
      62~93单纵模
      94~98双纵模
      99~130单纵模
      131~136双纵模
      137~165单纵模
      166~169双纵模
      170~198单纵模
      199~200双纵模
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    Weiguang CHEN, Yong DENG, Shulian ZHANG. Characteristics of cavity tuning of half-external cavity Nd:YAG and Nd:YVO4 microchip solid-state lasers[J]. Journal of Applied Optics, 2023, 44(2): 437

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    Paper Information

    Category: Research Articles

    Received: Aug. 30, 2022

    Accepted: --

    Published Online: Apr. 14, 2023

    The Author Email: ZHANG Shulian (zsl-dpi@mail.tsinghua.edu.cn)

    DOI:10.5768/JAO202344.0207002

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