Laser & Optoelectronics Progress, Volume. 58, Issue 15, 1516026(2021)

Review on Wet Etching Technique of Fused Silica Optical Elements

Yuhan Li1, Huapan Xiao2, Hairong Wang1、*, Xiaoya Liang1, Changpeng Li3, Xin Ye3、**, Xiaodong Jiang3, Xinxiang Miao3, Caizhen Yao3, and Laixi Sun3
Author Affiliations
  • 1State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an , Shaanxi 710049, China
  • 2College of Mechanical Engineering, Chongqing University, Chongqing 400044, China
  • 3Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang , Sichuan 621900, China
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    Figures & Tables(10)
    Damage morphologies on fused silica surface. (a) Damage at scratch edge[20]; (b) morphology of damage initiation site[23]
    Laser-induced damage resistance performances before and after fused silica leaching [5]. (a) Damage probability; (b) damage density
    Morphological evolution during etching. (a) Indented pits [41]; (b) ground surface[17]
    Laser damage growth of HF-etched laser damage sites with different sizes after laser irradiation [41].(a)Before irradiation;(b)after irradiation
    Surface impurity distributions of fused silica measured by TOF-SIMS at different process stages [18]. (a) Before leaching; (b) after HNO3/H2O2 leaching; (c) after HF etching 1 μm; (d) after HF etching 10 μm; (e) after HF etching 50 μm
    Evolution of light intensity distribution on cross-section of optical elements before and after etching [20]. (a) (b) Perpendicular to scratch; (c) (d) parallel to scratch
    Evolution of damage resistance performance of elements during etching. (a) LIDT[49]; (b) damage probability[42]; (c) damage density[18]
    Damage density comparison after AMP2 and AMP3 processing [50]
    • Table 1. LIDT improvement of fused silica under different etching conditions

      View table

      Table 1. LIDT improvement of fused silica under different etching conditions

      SampleComposition (mass fraction)Agitation frequency /kHzLIDT before etching /(J·cm-2LIDT after etching /(J·cm-2LIDT improvement /%Ref.
      Polished surfaceHF (2%)+NH4F (5%)40‒27018.1528.9659.634
      Polished surfaceHF (2.4%)+NH4F (12%)-~17~22~30.037
      Polished surfaceHF (2.4%) +NH4F (12%)1300~20~36~8037
      Polished surfaceHF (1.7%)40‒27022.125.716.338
      Polished surfaceHF (0.4%)+NH4F (12%)40‒27021.326.624.938
      Polished surfaceHF (12%)-16.230.6~8948
    • Table 2. LIDT improvement of fused silica processed by composite technique

      View table

      Table 2. LIDT improvement of fused silica processed by composite technique

      SampleComposite techniqueLIDT before etching /(J·cm-2LIDT after etching /(J·cm-2LIDT improvement /%Ref.

      Polished

      surface

      RIE(etching depth of 1 μm)+DCE(etching depth of 3 μm)256616459

      Polished

      surface

      RIE(etching depth of 1 μm)+DCE(etching depth of 3 μm)20.950.814360

      Polished

      surface

      RIE(etching depth of 5 μm)+DCE(etching depth of 3 μm)22.761.116961

      Polished

      surface

      RIE(etching depth of 1.5 μm)+DCE(etching depth of 3 μm)23.252.512662
      ScratchMRF+HF(etching time of 60 min)7.817.812863
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    Yuhan Li, Huapan Xiao, Hairong Wang, Xiaoya Liang, Changpeng Li, Xin Ye, Xiaodong Jiang, Xinxiang Miao, Caizhen Yao, Laixi Sun. Review on Wet Etching Technique of Fused Silica Optical Elements[J]. Laser & Optoelectronics Progress, 2021, 58(15): 1516026

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    Paper Information

    Category: Materials

    Received: Dec. 17, 2020

    Accepted: Feb. 4, 2021

    Published Online: Aug. 6, 2021

    The Author Email: Wang Hairong (whairong@xjtu.edu.cn), Ye Xin (yehanwin@mail.ustc.edu.cn)

    DOI:10.3788/LOP202158.1516026

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