Acta Physica Sinica, Volume. 69, Issue 2, 028501-1(2020)

Raman thermometry based thermal resistance analysis of GaN high electron mobility transistors with copper-based composite flanges

Kang Liu1 and Hua-Rui Sun1,2、*
Author Affiliations
  • 1School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
  • 2Key Laboratory of Micro-Nano Optoelectronic Information System of Ministry of Industry and Information Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
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    References(27)

    [7] Wu Y F, Moore M, Saxler A, Wisleder T, Parikh P[J]. 64th Device Research Conference IEEE, 151(2006).

    [16] Xu Y, Xue P J, Wei Q S, Shi Y S[J]. Hot Working Technol., 42, 111(2013).

    [21] Pomeroy J W, Middleton C, Singh M, Dalcanale S, Uren M J, Wong M H, Kuball M[J]. IEEE Electron Device Lett., 40, 189(2018).

    [26] Riedel G J, Pomeroy J W, Hilton K P, Maclean J O, Wallis D J, Uren M J, Pozina G[J]. IEEE Electron Device Lett., 30, 103(2008).

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    Kang Liu, Hua-Rui Sun. Raman thermometry based thermal resistance analysis of GaN high electron mobility transistors with copper-based composite flanges[J]. Acta Physica Sinica, 2020, 69(2): 028501-1

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    Paper Information

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    Received: Jun. 14, 2019

    Accepted: --

    Published Online: Nov. 9, 2020

    The Author Email:

    DOI:10.7498/aps.69.20190921

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