Journal of Inorganic Materials, Volume. 36, Issue 2, 168(2021)
Figures & Tables(14)
1. FSEM images of FTO and SnO2 films annealed at different temperatures
2. XPS spectra of SnO2 film annealed at 180 ℃ with FTO as substrate
3. UV-visible absorption spectra of SnO2 films annealed at different temperatures with FTO as substrate (Colourful curves are available on web)
4. Cross-sectional FSEM image of PSC with SnO2 ETL annealed at 180 ℃
5. (a) J -V curves, (b) PCE histograms, (c) IPCE spectra of PSCs prepared with SnO2 ETLs annealed at different temperatures; (d) IPCE and integral current curves of PSC with SnO2 ETL annealed at 180 ℃ (Colourful curves are available on web)
6. PL spectra of perovskite films prepared with SnO2 ETL annealed at different temperatures
7. Nyquist plots of PSCs prepared with SnO2 ETLs annealed at different temperatures
S1. AFM images of SnO2 films prepared at different annealing temperatures (20 μm×20 μm)
S2. XRD patterns of SnO2 films prepared at different annealing temperatures
S3. TRPL spectra of perovskite films prepared with SnO2 ETLs annealed at 60 and 90 ℃
S4. (a) Zoom-in high-frequency region of Nyquist plot and (b) equivalent circuit for PSCs with SnO2 ETLs annealed at different temperatures
Table 1. Bandgap of SnO2 films annealed at different temperatures
View tableView in ArticleTable 1. Bandgap of SnO2 films annealed at different temperatures
Temperature/℃ 60 90 120 150 180 210 240 Band gap/eV 3.88 3.87 3.88 3.91 3.90 3.88 3.88
Table 1. Photoelectric parameters of PSCs with SnO2 ETLs annealed at different temperatures
View tableView in ArticleTable 1. Photoelectric parameters of PSCs with SnO2 ETLs annealed at different temperatures
Temperature/℃ VOC/V JSC/(mA∙cm-2) FF/% PCE/% 60 0.87 18.85 40.75 6.72 90 0.90 19.15 55.70 9.60 120 0.97 19.56 71.67 13.60 150 1.06 19.65 74.36 15.48 180 1.09 20.91 75.91 17.28 210 1.06 19.27 73.32 14.91 240 0.99 19.23 70.75 13.43
Table 2. Electrical properties of SnO2 films annealed at different temperatures with FTO as substrate
View tableView in ArticleTable 2. Electrical properties of SnO2 films annealed at different temperatures with FTO as substrate
Temperature/℃ Resistivity/ (×10-4, Ω∙cm) Carrier mobility/ (cm2∙V-1·s-1) 60 1.40 23.11 90 1.74 25.60 120 1.80 33.98 150 1.24 45.26 180 1.46 57.89 210 1.64 39.81 240 1.38 26.21
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Yanxiang WANG, Peiyang GAO, Xueyun FAN, Jiake LI, Pingchun GUO, Liqun HUANG, Jian SUN.
Paper Information
Category: RESEARCH PAPER
Received: Dec. 25, 2019
Accepted: --
Published Online: Nov. 24, 2021
The Author Email:
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