Acta Optica Sinica, Volume. 15, Issue 4, 468(1995)
Near-Infrared Photoluminescence with Different Excitation Intensity of Heteroepitaxial GaAs Layers Grown on Si Substrates
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Near-Infrared Photoluminescence with Different Excitation Intensity of Heteroepitaxial GaAs Layers Grown on Si Substrates[J]. Acta Optica Sinica, 1995, 15(4): 468