Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AlGaN underlayer in a 290 nm UV-LED

Yufeng Li; Chenyu Wang; Ye Zhang; Peng Hu; Shengnan Zhang; Mengqi Du; Xilin Su; Qiang Li; Feng Yun

doi:10.1364/PRJ.387607

Photonics Research, Volume. 8, Issue 6, 806(2020)

Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AlGaN underlayer in a 290 nm UV-LED Editors' Pick

Yufeng Li¹, Chenyu Wang¹, Ye Zhang^1,2, Peng Hu¹, Shengnan Zhang², Mengqi Du², Xilin Su², Qiang Li², and Feng Yun^1,2、*

Author Affiliations

¹Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an 710049, China

²Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an 710049, China

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Yufeng Li, Chenyu Wang, Ye Zhang, Peng Hu, Shengnan Zhang, Mengqi Du, Xilin Su, Qiang Li, Feng Yun. Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AlGaN underlayer in a 290 nm UV-LED[J]. Photonics Research, 2020, 8(6): 806

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Paper Information

Category: Optical and Photonic Materials

Received: Jan. 13, 2020

Accepted: Mar. 18, 2020

Published Online: Apr. 30, 2020

The Author Email: Feng Yun (fyun2010@mail.xjtu.edu.cn)

DOI:10.1364/PRJ.387607

Topics

laser devices and laser physics

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