Laser & Optoelectronics Progress, Volume. 56, Issue 9, 090004(2019)

Fabrication and Application of All-Dielectric Nanoparticles

Hao Ma1,2,3, Yuanan Zhao1,2,3,4、*, and Jianda Shao1,2,3
Author Affiliations
  • 1 Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Shanghai 201800, China
  • 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3 Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
  • 4 State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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    Figures & Tables(13)
    Schematic of magnetic-dipole moment excited in all-dielectric nanoparticles[35]
    Spectral dependence properties of crystalline silicon at room temperature[36]. (a) Real and imaginary parts of refractive index; (b) ratio between electrical conduction current and displacement current
    Electric field distributions in nanoparticles under different conditions. (a) MD resonance; (b) ED resonance
    Examples of high-index dielectric nanoparticles fabricated by lithography. (a) Scanning electron microscopy (SEM) image of hollow Si cylinder[38]; (b) Si nanoparticles obtained by means of reactive-ion-etching based on mask[39]; (c) Si nanoparticles with additionally deposited Si3N4 thin film[40]
    SEM images of Si colloids and Si nanoparticles. (a) High-magnification SEM images of silicon colloids [41]; (b) self-aligned silicon nanoparticles obtained by chemical deposition[43]
    Dark-field optical image of Si nanoparticles and atomic force microscope (AFM) image of SiGe nanoparticles. (a) Dark-field optical image of Si nanoparticles obtained by thin film dewetting[44]; (b) AFM image of SiGe nanoparticles in array received after thermal dewetting[46]
    Examples of high-index dielectric nanoparticles fabricated by laser ablation method. (a) Dark-field optical image of silicon nanoparticle obtained via femtosecond laser ablation of bulk silicon[47]; (b) transmission electron microscope (TEM) image of ZnO submicrosphere[48]; (c) TEM image of CdSe submicrosphere[48]
    Examples of silicon nanoparticles fabricated by LIT method[50]. (a) Array of amorphous Si nanoparticles fabricated by LIT method and visualized with dark-field microscopy; (b) femtosecond laser printed Si nanoparticles
    Resonant characteristics of nano-resonators with high index semiconductor materials. (a) Cubic, spherical or disc-shaped resonators composed of high-index dielectric[52]; (b) effective negative magnetic permeability μeff and e?ective negative dielectric permittivity εeff52; (c) reflection and transmission spectra of two-dimensional arrays of tellurium resonators near electric or magnetic resonance[21]
    Wavelength dependence of directivity of two types of all-dielectric nano-antennas[67]. (a) Single dielectric nanoparticle; (b) Yagi-Uda-type structure when separation distance D is 70 nm
    Maximum directivity of super-directive nano-antenna versus position of dipole source at wavelength of 455 nm[68]
    Several common metamaterial structures. (a)(b) All-dielectric metamaterial based on spherical and cylindrical particles[77] ; (c)-(f) all-dielectric metasurfaces[78,57,40]
    Spectrum for third harmonic generation (THG) of Si nanodisk array and directionality of Si nano-antenna. (a) THG spectrum of nanodisk array(purple dots)and linear transmission spectrum (gray area) [26]; (b)dynamical reconfiguration of Si nano-antenna directivity via photoexcitation, and scattering diagrams of incident beam at largest intensity shown in two insets[29]
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    Hao Ma, Yuanan Zhao, Jianda Shao. Fabrication and Application of All-Dielectric Nanoparticles[J]. Laser & Optoelectronics Progress, 2019, 56(9): 090004

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    Paper Information

    Category: Reviews

    Received: Oct. 22, 2018

    Accepted: Nov. 30, 2018

    Published Online: Jul. 5, 2019

    The Author Email: Zhao Yuanan (yazhao@siom.ac.cn)

    DOI:10.3788/LOP56.090004

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