Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction

Xiaobin Liu; Xuetong Li; Yuxuan Li; Yingzhi Li; Zihao Zhi; Min Tao; Baisong Chen; Lanxuan Zhang; Pengfei Guo; Guoqiang Lo; Xueyan Li; Fengli Gao; Bonan Kang; Junfeng Song

doi:10.1364/PRJ.452004

Photonics Research, Volume. 10, Issue 8, 1956(2022)

Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction

Xiaobin Liu¹, Xuetong Li¹, Yuxuan Li¹, Yingzhi Li¹, Zihao Zhi¹, Min Tao¹, Baisong Chen¹, Lanxuan Zhang¹, Pengfei Guo², Guoqiang Lo², Xueyan Li¹, Fengli Gao¹, Bonan Kang¹, and Junfeng Song^1,3、*

Author Affiliations

¹State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

²Advance Micro Foundry Pte Ltd, Singapore 117685, Singapore

³Peng Cheng Laboratory, Shenzhen 518000, China

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Xiaobin Liu, Xuetong Li, Yuxuan Li, Yingzhi Li, Zihao Zhi, Min Tao, Baisong Chen, Lanxuan Zhang, Pengfei Guo, Guoqiang Lo, Xueyan Li, Fengli Gao, Bonan Kang, Junfeng Song. Three-terminal germanium-on-silicon avalanche photodiode with extended p-charge layer for dark current reduction[J]. Photonics Research, 2022, 10(8): 1956

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Paper Information

Category: Silicon Photonics

Received: Dec. 22, 2021

Accepted: Jun. 13, 2022

Published Online: Jul. 27, 2022

The Author Email: Junfeng Song (songjf@jlu.edu.cn)

DOI:10.1364/PRJ.452004

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology