[3] [3] Li Y, Salviati G M, Bongers M G, et al.On the formation of antiphase domains in the system of GaAs on Ge.J Cryst Growth, 1996,163(2):195～202

[4] [4] McMahon W E, Olson J M. Atomic-resolution STM study of a structural phase transition of steps on vicinal As/Ge(100).Physical Review(B), 1999,60(23) :15999～16005

[5] [5] Timo G, Flores C. The effect of the growth rate on the low pressure metalorganic vapour epitaxy of GaAs/Ge heterostructures.J Crystal Growth, 1992,125(3):440～448