Infrared and Laser Engineering, Volume. 51, Issue 2, 20220022(2022)

Light beam induced current mapping to characterize damage characteristics of silicon solar cell irradiated by continuous-wave laser

Jian Lu, Zhijian Xie*, and Hongchao Zhang
Author Affiliations
  • School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
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    Figures & Tables(14)
    Diagram of the light path in experiment of laser irradiation of solar cell
    Diagram of LBIC mapping system
    Surface images of solar cells after laser irradiation with different power densities
    Voltage-current characteristic curves of solar cells in dark environment after laser irradiation with different power densities
    650 nm LBIC maps of solar cells after laser irradiation
    980 nm LBIC maps of solar cells after laser irradiation
    Surface images of solar cells after laser irradiation on fingers. Two (a), three (b), and five (c) adjacent fingers
    Voltage-current characteristic curves of solar cell in dark environment after laser irradiation on fingers
    650 nm LBIC maps of solar cell after laser irradiation on fingers. Two (a), three (b), and five (c) adjacent fingers
    • Table 1. Series resistance and shunt resistance of solar cells after laser irradiation with different power densities

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      Table 1. Series resistance and shunt resistance of solar cells after laser irradiation with different power densities

      Power density/W·cm−2Series resistance/ΩSeries resistance drop percentageShunt resistance/ΩShunt resistance drop percentage
      Before irradiation1.35-6543.74-
      483.20.1390.4%5060.0122.7%
      563.70.1787.4%1747.8873.3%
      644.20.3276.3%170.3397.4%
      724.80.1489.6%643.0690.2%
      805.30.1191.9%141.1097.8%
    • Table 2. Percentage of solar cell current drop after laser irradiation with different power densities (650 nm)

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      Table 2. Percentage of solar cell current drop after laser irradiation with different power densities (650 nm)

      Power density/W·cm-2Minimum current in damaged area/μACurrent away from the damaged area/μADrop percentage
      483.254.8877.3429.0%
      563.715.0575.9780.2%
      644.214.1476.0581.4%
      724.815.9278.4279.7%
      805.314.8275.7580.4%
    • Table 3. Damaged area of solar cells after laser irradiation with different power densities(980 nm)

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      Table 3. Damaged area of solar cells after laser irradiation with different power densities(980 nm)

      Power density/W·cm-2Damage area/mm2Percentage of damaged area in spot area
      483.20.5718.2%
      563.72.7487.2%
      644.22.3273.7%
      724.83.39107.8%
      805.35.08161.9%
    • Table 4. Series resistance and shunt resistance of solar cells after laser irradiation on fingers

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      Table 4. Series resistance and shunt resistance of solar cells after laser irradiation on fingers

      Irradiation positionSeries resistance/ΩSeries resistance drop percentageShunt resistance/ΩShunt resistance drop percentage
      Before0.40-299.82-
      Two adjacent fingers0.1757.5%94.6668.4%
      Three adjacent fingers0.0880.0%76.3574.5%
      Five adjacent fingers0.0782.5%53.1882.3%
    • Table 5. Percentage of solar cell current drop after laser irradiation on fingers (650 nm)

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      Table 5. Percentage of solar cell current drop after laser irradiation on fingers (650 nm)

      Irradiation positionCurrent on the side away from the electrode lead/μACurrent on the side close to the electrode lead/μADrop percentage
      Two adjacent fingers207.77243.9214.8%
      Three adjacent fingers198.97232.7314.5%
      Five adjacent fingers40.57243.9683.4%
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    Jian Lu, Zhijian Xie, Hongchao Zhang. Light beam induced current mapping to characterize damage characteristics of silicon solar cell irradiated by continuous-wave laser[J]. Infrared and Laser Engineering, 2022, 51(2): 20220022

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    Paper Information

    Category: Special issue-Laser technology and its application

    Received: Jan. 6, 2022

    Accepted: --

    Published Online: Mar. 21, 2022

    The Author Email: Xie Zhijian (xiezhijian@njust.edu.cn)

    DOI:10.3788/IRLA20220022

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