[1] [1] NI X W, SHEN Z H, LU J. Study of laser destruction for optoelectronic device and semiconductor material［J］. Journal of Optoelectronic·Laser, 1997，8(6)：487-492.(in Chinese)

[2] [2] DDING W H. Analyse on the thermal interaction of the long pulse high power laser and semiconductor ［J］. Infrared and Laser Engineering, 2007，36(S1)：332-335. (in Chinese)

[3] [3] MIOTELLO A，KELLY R. Critical assessment of thermal models for laser sputtering at high flounces ［J］. Applied Physics Letters, 1995, 67(24):3335- 3337.

[4] [4] TAN X Y,ZHANG D M. Vaporization effect studying on high-power nanosecond pulsed ［J］. Physica B: Condensed Matter, 2005, 358(1-4):86-92.

[5] [5] LIU D, ZHANG D M. Vaporization and plasma shielding during high power nanosecond laser ablation of silicon and nickel ［J］. Chinese Physics Letter, 2008,25(4):1368-1371.

[6] [6] SHA T, WU B X. Thermal modeling and experimental study of infrared nanosecond laser ablation of silicon ［J］. Journal of Applied Physics, 2009,106:123507.

[7] [7] CHEN Y. Analysis of thermal stress damage in single-crystal silicon induced by 1064 nm long-pulse laser［J］. SPIE, 2007,6835:68351X.

[8] [8] ASCHERON C E. Self-focusing: Past and Present［M］. Springer New York, 2009.

[9] [9] SCHNEIDER M. New experimental approach to study laser matter interaction during drilling in percussion regime［J］.Journal of Laser Micro/Nanoengineering , 2007,2(2):117-122.

[10] [10] YOO J H,JEONG S H. Explosive change in crater properties during high power nanosecond laser ablation of silicon ［J］. Journal of Applied Physics, 2000,88(3):1638-1649.

[11] [11] SHEN Z H,NI X W. Theoretical calculation for thermal effect of the semiconductors induced by the Laser Pulse ［J］.Journal of Optoelectronic·laser 2000,88(3):1638-1649.