[1] [1] S. S. Zhang, G. Sun, Y. W. Li, B. Zhang, L. Lin, Y. Wang, et al., “Continuously improved gas-sensing performance of SnO2/Zn2SnO4 porous cubes by structure evolution and further NiO decoration,” Sensors and Actuators B: Chemical, 2018, 255: 2936–2943.

[2] [2] T. N. N. Dau, V. H. Vu, T. T. Cao, V. C. Nguyen, C. T. Ly, D. L. Tran, et al., “In-situ electrochemically deposited Fe3O4 nanoparticles onto graphene nanosheets as amperometric amplifier for electrochemical biosensing applications,” Sensors and Actuators B: Chemical, 2019, 283: 52–60.

[3] [3] R. Alrammouz, J. Podlecki, P. Abboud, B. Sorli, and R. Habchi, “A review on flexible gas sensors: from materials to devices,” Sensors and Actuators A, 2018, 284: 209–231.

[4] [4] Z. Xiao, L. B. Kong, S. C. Ruan, X. L. Li, S. J. Yu, X. Y. Li, et al., “Recent development in nanocarbon materials for gas sensor applications,” Sensors and Actuators B: Chemical, 2018, 274: 235.

[5] [5] J. Kwoen, B. Jang, J. Lee, T. Kageyama, K. Watanabe, and Y. Arakawa, “All MBE grown InAs/GaAs quantum dots lasers on on-axis Si (001) ,” Optics Express, 2018, 26(9): 11568.

[6] [6] Q. Li, Y. Huang, J. Ning, C. Jiang, X. Wang, H. Chen, et al., “InAs/GaAs quantum dot dual-mode distributed feedback laser towards large tuning range continuous-wave terahertz application,” Nanoscale Research Letters, 2018, 13(1): 267.

[7] [7] D. Kim, S. Hatch, J. Wu, K. A. Sablon, P. Lam, P. Jurczak, et al., “Type-II InAs/GaAsSb quantum dot solar cells with GaAs interlayer,” IEEE Journal of Photovoltaics, 2018, 8(3): 741.

[8] [8] Y. Bidaux, K. A. Fedorova, D. A. Livshits, E. U. Rafailov, and J. Faist, “Investigation of the chromatic dispersion in two section InAs/GaAs quantum-dot lasers,” IEEE Photonics Technology Letters, 2017, 29(24): 2246.

[9] [9] N. S. Beattie, P. See, G. Zoppi, P. M. U. M. Duchamp, I. Farrer, D. A. Ritchie, et al., “Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells,” ACS Photonic, 2017, 4(11): 2745.

[10] [10] R. D. Angelis, M. Casalboni, L. D. Amico, F. D. Matteis, F. Hatami, W. T. Masselink, et al., “Vapour sensitivity of InP surface quantum dots,” Key Engineering Materials, 2014, 605: 177.

[11] [11] R. D. Angelis, M. Casalboni, F. D. Matteis, F. Hatami, W. T. Masselink, H. Zhang, et al., “Chemical sensitivity of InP/In0.48Ga0.52P surface quantum dots studied by time-resolved photoluminescence spectroscopy,” Journal of Luminescence, 2015, 168: 54.

[12] [12] M. J. Milla, J. M. Ulloa, and A. Guzman, “Photoexcited-induced sensitivity of InGaAs surface QDs to environment,” Nanotechnology, 2014, 25(44): 445501.

[13] [13] B. L. Liang, Z. M. Wang, Y. I. Mazur, and G. J. Salamo, “Photoluminescence of surface InAs quantum dot stacking on multiplayer buried quantum dots,” Applied Physics Letters, 2006, 89(24): 243124.

[14] [14] Q. Yuan, B. L. Liang, C. Zhou, Y. Wang, Y. N. Guo, S. F. Wang, et al., “Interplay effect of temperature and excitation intensity on the photoluminescence characteristics of InGaAs/GaAs surface quantum dots,” Nanoscale Research Letters, 2018, 13(1): 387.

[15] [15] B. L. Liang, Z. M. Wang, Y. I. Mazur, S. Seydmohamadi, M. E. Ware, and G. J. Salamo, “Tuning the optical performance of surface quantum dots in InGaAs/GaAs hybrid structures,” Optics Express, 2007, 15(13): 8157.

[16] [16] A. Lin, B. L. Liang, V. G. Dorogan, Yu I. Mazur, G. G. Tarasov, G. J. Salamo, et al., “Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure,” Nanotechnology, 2013, 24(7): 075701.

[17] [17] G. Wang, B. L. Liang, B. C. Juang, A. Das, M. C Debnath, D. L. Huffaker, et al., “Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots,” Nanotechnology, 2016, 27(46): 465701.

[18] [18] B. L. Liang, Z. M. Wang, Y. I. Mazur, and G. J. Salamo, “Correlation between surface and buried InAs quantum dots,” Applied Physics Letters, 2006, 89(4): 043125.