Microelectronics, Volume. 53, Issue 2, 315(2023)

Study on the Performance of MoS2 Transistors Encapsulated by Novel van der Waals Insulators

YUAN Kai1, MIN Chengyu1, CHEN Pengkun1, HU Huan1, HUANG Jun1, YANG Fan1, and TANG Zhaohuan1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(14)

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    [3] [3] DESAI S B, MADHVAPATHY S B, SACHID A B, et al. MoS2 transistors with 1-nanometer gate lengths [J]. Science, 2016, 354(6308): 99-102.

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    [8] [8] VU Q A, FAN S, LEE S H, et al. Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors [J]. 2D Materials, 2018, 5(3): 031001.

    [9] [9] LEE G H, CUI X, KIM Y D, et al. Highly stable dual-gated MoS2 transistors encapsulated by hexagonal boron nitride with gate-controllable contact resistance, and threshold voltage [J]. ACS Nano, 2015, 9(7): 7019-7026.

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    YUAN Kai, MIN Chengyu, CHEN Pengkun, HU Huan, HUANG Jun, YANG Fan, TANG Zhaohuan. Study on the Performance of MoS2 Transistors Encapsulated by Novel van der Waals Insulators[J]. Microelectronics, 2023, 53(2): 315

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    Paper Information

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    Received: Mar. 6, 2022

    Accepted: --

    Published Online: Dec. 15, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.220081

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