Laser & Optoelectronics Progress, Volume. 58, Issue 23, 2314003(2021)
Research on Thermal Analysis Modeling of Semiconductor Laser Based on Package Prototype
Fig. 1. Schematic diagram of chip and its package structure. (a) Main view; (b) top view
Fig. 2. Results of steady-state thermal simulation of simple model. (a) Overall temperature distribution of model; (b) temperature distribution of active layer
Fig. 3. Temperature distribution results of the simple model. (a) Temperature distribution at the front cavity surface; (b) temperature distribution along the cavity length direction; (c) temperature distribution in the vertical direction of the front cavity surface
Fig. 4. Simulation results of the average temperature of the active layerwith single influeice factor. (a) Stripe width; (b) thickness of copper layer on heat-sink; (c) number of bonding wires
Fig. 5. Ccmparison of simple model and complex model. (a) Simple model; (b) complex model; (c) local enlargement view of internal structure of simple model chip; (d) local enlargement view of internal structure of complex model chip
Fig. 6. Results of steady-state thermal simulation of the complex model. (a) Overall temperature distribution of the model; (b) temperature distribution of the active layer
Fig. 7. Temperabure distribution results of the complex model. (a) Temperature distribution of front cavity surface; (b) temperature distribution along the cavity length direction; (c) temperature distribution in vertical direction of front cavity surfacee
Fig. 8. Output wavelength variation with injection current when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃
Fig. 9. Output wavelength varying with injection current at different heat sink surface temperatures. (a) Heat sink bottom temperature is 25 °C; (b) heat sink bottom temperature is 50 °C
Fig. 10. Device efficiency and device output power with injection current of 10 A. (a) Device efficiency: (b) device output power
Fig. 11. Simulation results and experimental results of average temperature of active layer when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃. (a) Experimental results; (b) simulation results when the temperature of heat sink bottom surface is 25 ℃; (c) simulation results when the temperature of heat sink bottom surface is 50 ℃
Fig. 12. Eror between the experimental results and the simulation results of the two models when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃. (a) Heat sink bottom temperature is 25 ℃; (b) heat sink bottom temperature is 50 ℃
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Zekun Ma, Tao Lin, Rongjin Zhao, Wanjun Sun, Yan Mu, Yaning Li, Jianan Xie. Research on Thermal Analysis Modeling of Semiconductor Laser Based on Package Prototype[J]. Laser & Optoelectronics Progress, 2021, 58(23): 2314003
Category: Lasers and Laser Optics
Received: Mar. 10, 2021
Accepted: Mar. 23, 2021
Published Online: Nov. 18, 2021
The Author Email: Lin Tao (llttlintao@163.com)