Laser & Optoelectronics Progress, Volume. 58, Issue 23, 2314003(2021)

Research on Thermal Analysis Modeling of Semiconductor Laser Based on Package Prototype

Zekun Ma, Tao Lin*, Rongjin Zhao, Wanjun Sun, Yan Mu, Yaning Li, and Jianan Xie
Author Affiliations
  • School of Automation & Information Engineering, Xi'an University of Technology, Xi'an , Shaanxi 710048, China
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    Figures & Tables(13)
    Schematic diagram of chip and its package structure. (a) Main view; (b) top view
    Results of steady-state thermal simulation of simple model. (a) Overall temperature distribution of model; (b) temperature distribution of active layer
    Temperature distribution results of the simple model. (a) Temperature distribution at the front cavity surface; (b) temperature distribution along the cavity length direction; (c) temperature distribution in the vertical direction of the front cavity surface
    Simulation results of the average temperature of the active layerwith single influeice factor. (a) Stripe width; (b) thickness of copper layer on heat-sink; (c) number of bonding wires
    Ccmparison of simple model and complex model. (a) Simple model; (b) complex model; (c) local enlargement view of internal structure of simple model chip; (d) local enlargement view of internal structure of complex model chip
    Results of steady-state thermal simulation of the complex model. (a) Overall temperature distribution of the model; (b) temperature distribution of the active layer
    Temperabure distribution results of the complex model. (a) Temperature distribution of front cavity surface; (b) temperature distribution along the cavity length direction; (c) temperature distribution in vertical direction of front cavity surfacee
    Output wavelength variation with injection current when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃
    Output wavelength varying with injection current at different heat sink surface temperatures. (a) Heat sink bottom temperature is 25 °C; (b) heat sink bottom temperature is 50 °C
    Device efficiency and device output power with injection current of 10 A. (a) Device efficiency: (b) device output power
    Simulation results and experimental results of average temperature of active layer when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃. (a) Experimental results; (b) simulation results when the temperature of heat sink bottom surface is 25 ℃; (c) simulation results when the temperature of heat sink bottom surface is 50 ℃
    Eror between the experimental results and the simulation results of the two models when the temperature of heat sink bottom surface is 25 ℃ and 50 ℃. (a) Heat sink bottom temperature is 25 ℃; (b) heat sink bottom temperature is 50 ℃
    • Table 1. Structure and material parameters of each layer

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      Table 1. Structure and material parameters of each layer

      LayerMaterialThickness /μmThermal conductivity /(W∙m-1∙K-1
      N-contactAu0.4315
      N-contactAu0.1315
      N-contactGe0.164
      N-contactNi0.160.7
      SubstrateGaAs10046
      Lower cladding layerAl0.5GaAs1.111
      Lower waveguide layerAl0.33GaAs0.612.04
      Active layerAl0.12Ga0.795In0.085As0.0084
      Upper waveguide layerAl0.33GaAs0.412.04
      Upper cladding layerAl0.5GaAs1.111
      CapGaAs0.1546
      Insulating layerSiO20.21.28
      P-contactTi0.117
      P-contactPt0.169.1
      P-contactAu0.1315
      P-contactAu0.4315
      SolderAuSn557
      CopperCu80398
      HeatsinkAlN460120
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    Zekun Ma, Tao Lin, Rongjin Zhao, Wanjun Sun, Yan Mu, Yaning Li, Jianan Xie. Research on Thermal Analysis Modeling of Semiconductor Laser Based on Package Prototype[J]. Laser & Optoelectronics Progress, 2021, 58(23): 2314003

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Mar. 10, 2021

    Accepted: Mar. 23, 2021

    Published Online: Nov. 18, 2021

    The Author Email: Lin Tao (llttlintao@163.com)

    DOI:10.3788/LOP202158.2314003

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