Fig. 1. The influence of different hydrogen dilution ratio on passivation effect of amorphous silicon film

Fig. 2. Raman spectra of i-a-Si:H deposited by different hydrogen dilution ratio

Fig. 3. The influence of different annealing temperatures on carrier lifetime variation in the structure of i-a-Si:H/n-c-Si/i-a-Si:H

Fig. 4. Raman spectra of i-a-Si:H film in different annealing temperature

Fig. 5. Raman spectra of both monolayer and interlayer of amorphous silicon film

Fig. 6. The influence of monolayer and interlayer i-a-Si:H films on passivation effect of silicon wafer before and after annealing with different hydrogen dilution ratios