Acta Optica Sinica, Volume. 43, Issue 10, 1014004(2023)

Research on 795 nm High Power External Cavity Semiconductor Laser

Wei Zhang1,2, Li Zhong1、*, Deshuai Zhang1,2, Xia Wu1, Yuxi Ni1, Suping Liu1, and Xiaoyu Ma1
Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(7)
    Schematic diagram of external cavity mode, internal cavity mode, and VBG feedback bandwidth of semiconductor laser
    Relationship between volume Bragg grating diffraction efficiency and incident wavelength and incident angle. (a) Incident wavelength; (b) incident angle
    Schematic diagram of experimental device
    Laser output spectrum of the semiconductor laser before and after mode locked by VBG
    Output power characteristic curves of VBG external cavity semiconductor lasers
    Spectral analysis under different driving current conditions. (a) Spectrum of gain chip free-running; (b) spectrum of external cavity semiconductor laser with VBG
    Spectrum of external cavity semiconductor laser at different operating temperatures
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    Wei Zhang, Li Zhong, Deshuai Zhang, Xia Wu, Yuxi Ni, Suping Liu, Xiaoyu Ma. Research on 795 nm High Power External Cavity Semiconductor Laser[J]. Acta Optica Sinica, 2023, 43(10): 1014004

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Nov. 18, 2022

    Accepted: Jan. 29, 2023

    Published Online: May. 9, 2023

    The Author Email: Zhong Li (zhongli@semi.ac.cn)

    DOI:10.3788/AOS222014

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