[1] [1] Zhang H, Hu N, Zeng Z P, et al. High-efficiency green InP quantum dot-based electroluminescent device comprising thick-shell quantum dots[J]. Advanced Optical Materials, 2019, 7(7): 1801602.

[2] [2] Grebenshchikova E A, Sidorov V G, Shutaev V A, et al. Effect of the hydrogen concentration on the Pd/n-InP Schottky diode photocurrent[J]. Semiconductors, 2019, 53(2): 234-236.

[3] [3] Wang Z T, Huang J, Zhu L Q, et al. High-performance InP-based bias-tunable near-infrared/extended-short wave infrared dual-band photodetectors[J]. J. Lightwave Technol., 2022, 40(15): 5157-5162.

[4] [4] Wang H, Zhang J C, Cheng F M, et al. Broad gain, continuous-wave operation of InP-based quantum cascade laser at λ~11.8μm[J]. Chinese Physics B, 2021, 30(12): 124202.

[5] [5] Cheron J, Williams D F, Chamberlin R A, et al. A 110GHz comb generator in a 250nm InP HBT technology[J]. IEEE Microwave and Wireless Components Letters, 2022, 32(6): 736-739.

[6] [6] Lu P, Haddad T, Sievert B, et al. InP-based THz beam steering Leaky-wave antenna[J]. IEEE Trans. on Terahertz Science and Technol., 2021, 11(2): 218-230.

[11] [11] Gildenblat G S, Goldberg Y A. Handbook Series on Semiconductor Parameters Vol.1[M]. World Scientific Publishing Company, 1996.