Acta Photonica Sinica, Volume. 33, Issue 10, 1196(2004)

Resonant-cavity Enhanced Optical Modulator with Ultrathin Active Layer

[in Chinese]... [in Chinese], [in Chinese], [in Chinese], [in Chinese] and [in Chinese] |Show fewer author(s)
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    References(3)

    [1] [1] Newey J.Optical modulators get ready for a high-speed network future,compound semiconductors.2002.march

    [2] [2] Lentine A L, Goossen K W, Walker J A,et al.High-speed optoelectronic VLSI switching chip with>4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS. IEEE J Selected Topics in Quantum Electron,1996,2(1):77

    [3] [3] Selim ünlü M,Strite S.Resonnant cavity enhanced photonic device.J Appl Phys,1995,78(2):607

    CLP Journals

    [1] ZHU Bin, HAN Qin, YANG Xiao-Hong. High-Power Property of Resonant-Cavity-Enhanced Photodetectors Grown on GaAs[J]. Acta Photonica Sinica, 2009, 38(5): 1074

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Resonant-cavity Enhanced Optical Modulator with Ultrathin Active Layer[J]. Acta Photonica Sinica, 2004, 33(10): 1196

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    Paper Information

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    Received: Aug. 12, 2003

    Accepted: --

    Published Online: Sep. 17, 2007

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