Laser & Optoelectronics Progress, Volume. 60, Issue 18, 1811007(2023)

Research Progress in Semiconductor Based All-Optical Terahertz Spatial Modulators

Yulian He and Qiye Wen*
Author Affiliations
  • State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, Sichuan , China
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    Figures & Tables(12)
    THz frequency modulation based on photo-induced planar pattern[42]. (a) Formation of planar light induced line grating patterns on the surface of silicon prisms; (b) optical microscope image; (c) modulation performance as a function of the period of the pattern; (d) dependence of spectral minimum frequency on structural periodicity
    Demonstration of several types of modulations with various photo-excited patterns[45]. (a) Experimental setup for THz modulation. (b) light excitation modes of different patterns
    THz modulation of PI-FZP[51]. (a) Experimental setup; (b)‒(e) measured two-dimensional radiation intensities showing the THz beam profile for different PI-FZP patterns
    Generation of THz special beams. (a) Vortex beam[52]; (b) vector beam[53]
    THz imaging based a single-pixel detector with optically controlled STM[63]. (a) Typical schematic of imaging system; (b) THz imaging result
    Theoretical investigation on all-optical Si-based STM[117]. (a) Theoretical model; (b) modulation depth variation curve with Si thickness; (c) modulation depth variation curve with pump laser wavelength; (d) modulation depth variation curve with laser reflectivity; (e) modulation depth variation curve with carrier lifetime
    All-optical THz modulator based on SiNT-Si[121]. (a) Scanning electron microscope (SEM) results of SiNT; (b) test results of laser reflectivity; (c) schematic of all-optical THz modulator based on SiNT-Si; (d) THz time-domain spectra; (d) modulation depth variation curves with laser power
    All-optical THz modulator based on MPA-Si[122]. (a)(b) SEM results and schematic of all-optical THz modulator based on MPA-Si; (c) results of laser reflection measurement; (d) comparison results of modulation depth obtained with different laser wavelengths
    All-optical THz modulator based on TPA-Si[123]. (a) Preparation procedure; (b) SEM result of TPA-Si surface; (c) SEM result of TPA-Si cross section; (d) measured results of effective lifetime of carriers; (e) results of laser reflection measurement; (f) schematic of all-optical THz modulator based on TPA-Si
    All-optical THz modulator based on S-passivated GaAs[125]. (a) Structure diagram; (b) results of dynamic response characterization; (c) performance comparison of all-optical THz modulators
    • Table 1. Summary of the structure and parameters of electrically controlled STM

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      Table 1. Summary of the structure and parameters of electrically controlled STM

      Pixel unitPixel size /(mm×mm)Pixel arrayFrequency /THzVoltage /VModulation parameter(effciency)Ref.
      Subwavelength split-resonant ring(SRR)array4×44×40.3614Amplitude(35%‒50%)13
      2×2 subarray of MMA-based array1.2×1.24×42.72,3.27,3.81,4.3426.5Amplitude(62%)11
      Single-atom graphene layer0.7×0.74×40.57‒0.63-10,40Amplitude(~50%)14
      MMA array with LC0.48×0.4666×63.6715Amplitude(75%)10
      Graphene supercapacitor1×15×50.1‒1.52Amplitude(62%±5%)15
      Sandwich structure of VO2/sapphire/VO24×42×20.13‒0.90Amplitude(96%)16
      Metamaterials based on planar array of electric LC resonators1×1.32×2~0.451Amplitude/36%17
      Graphene30×501×101.1-3Phase(π/2)18
      Metasurface based on graphene array1×81×80.9826,-44Beam steering(25°)19
      Electromechanical reconfigurable micromirror array0.98×2.084×60.97‒2.2837Amplitude(50%)20
      Metal-insulator-metal(MIM)structure with LC8.5×0.343×80.6740Beam steering(32°)21
      Graphene4×416×160.1‒3.02Amplitude(>70%)22
      MMA with LC2.33×2.338×80.47‒0.4510Frequency(20 GHz)23
      MIM with VO21.9×1.98×80.42‒0.48Amplitude(>65%)24
      MMA with LC0.46×0.461×260.32310Phase(3π/4)25
      Asymmetric SRR array with LC8×80.7160Amplitude(38.8%)26
      Asymmetric SRR array with LC0.64×15.361×240.42610Phase(π)27
    • Table 2. Performance comparison of all-optical Si-based STM based on heterostructure

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      Table 2. Performance comparison of all-optical Si-based STM based on heterostructure

      Heterogeneous filmBandwidth /THzModulation depth /%Modultion speed or response timeRef.
      CH3NH3PbBr30.2‒2.08080 kHz88
      MEH-PPV0.2‒2.699.52.56 ms94
      Graphene0.8‒1.492.70.2 s96
      WS20.2‒1.694.8~3 kHz103
      MoTe20.3‒2.099.926.2 ms104
      h-BN0.2‒1.6630.3 s109
      AuNPs0.15‒1.0700.41 ms71
      AuNPs0.2‒1.2803.8 kHz110
      AuNRs0.2‒1.2694.6 kHz110
      AuNRs@PVA0.2‒1.1803 kHz111
      Fe3O4 NPs0.2‒2.692~12 kHz112
      DAST0.23‒0.35531.26 MHz84
      CsPbBr30.23‒0.3545.52.5 MHz90
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    Yulian He, Qiye Wen. Research Progress in Semiconductor Based All-Optical Terahertz Spatial Modulators[J]. Laser & Optoelectronics Progress, 2023, 60(18): 1811007

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    Paper Information

    Category: Imaging Systems

    Received: Apr. 18, 2023

    Accepted: Jul. 18, 2023

    Published Online: Sep. 19, 2023

    The Author Email: Wen Qiye (qywen@uestu.edu.cn)

    DOI:10.3788/LOP231428

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