Fig. 1. Comparison of parameters of MW infrared detectors at different working temperatures

Fig. 2. Steady state power consumption and cooling time of cryocooler at different working temperature

Fig. 3. Imaging effect of p-on-n middle wavelength detector in AIM Co.

Fig. 4. Structure of P⁺/π(v)/N⁺ device

Fig. 5. Bandgap structure of HgCdTe nBn device

Fig. 6. Structure of device in unbalanced mode in DRS Co

Fig. 7. Distribution of As ion after injection and diffusion

Fig. 8. P⁺/v/N⁺ HgCdTe device structure of Teledyne

Fig. 9. Sample of barrier HgCdTe cell device in Military Technical University at Warsaw

Fig. 10. Relationship between the intrinsic carrier concentration and temperature at x=0.3

Fig. 11. Relationship between the intrinsic carrier concentration and temperature at x=0.22

Fig. 12. Relationship between dark current density and working temperature of detectors

Fig. 13. PSD of MWIR p-on-n devices at 140 K

Fig. 14. Number of RTS noise pixels detected as a function of the operating temperature for MWIR devices

Fig. 15. (a) SRH G-R current ; (b) Trap assisted tunneling current

Fig. 16. Relationship between Auger lifetime and temperature at x=0.3

Fig. 17. Relationship between Auger lifetime and temperature at x=0.22

Fig. 18. Relationship between Auger lifetime and temperature atx=0.3

Fig. 19. Carrier transport schematic of nBn devices under reverse bias

Fig. 20. Energy band configuration of HgCdTe heterojunctions

Fig. 21. Structure, energy band and carrier distribution of P⁺/v/N⁺ and P⁺/π/N⁺ devices

Fig. 22. Relationship between depletion width and reverse bias voltage with different absorption layer doping concentration