Acta Optica Sinica, Volume. 19, Issue 8, 1138(1999)

Nonlinear Optical Characteristic of Photoluminescence from Porous Silicon

[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    References(5)

    [1] [1] Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett., 1990, 57(9/10):1046~1048

    [2] [2] Jain R K, Lind R C. Degenerate four-wave mixing insemiconductor-doped glasses. J. Opt. Soc. Am., 1983, 73(5):647~649

    [3] [3] Hang H, Schmitt-Rink S. Basic mechanisms of the optical nonlinearities of semiconductors near the band edge. J. Opt. Soc. Am. (B), 1985, 2(7):1135~1138

    [4] [4] Wang J, Jiang H B, Wang W C et al.. Efficient infrared-up-conversion luminescence in porous silicon: a quantum-confinement-induced effect. Phys. Rev. Lett., 1992, 69(22):3252~3255

    [5] [5] Qin G G, Jia Y Q. Mechanism of the visible luminescence in porous silion. Solid State Commun., 1993, 86(9):559~563

    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Nonlinear Optical Characteristic of Photoluminescence from Porous Silicon[J]. Acta Optica Sinica, 1999, 19(8): 1138

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Materials

    Received: Jun. 16, 1997

    Accepted: --

    Published Online: Aug. 9, 2006

    The Author Email:

    DOI:

    Topics