Journal of Infrared and Millimeter Waves, Volume. 41, Issue 1, 2021417(2022)

Progress on nBn infrared detectors

Qian SHI1,2,3, Shu-Kui ZHANG2,3、*, Jian-Lu WANG2,3,4,5、**, and Jun-Hao CHU3,4
Author Affiliations
  • 1Shanghai Institute Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China
  • 2Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
  • 3State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 4Institute of Optoelectronics,Shanghai Frontier Base of Intelligent Optoelectronics and Perception,Fudan University,Shanghai 200433,China
  • 5Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China
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    References(94)

    [66] S M Sze, Y Li, K K Ng. Physics of semiconductor devices. John wiley & sons(2021).

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    Qian SHI, Shu-Kui ZHANG, Jian-Lu WANG, Jun-Hao CHU. Progress on nBn infrared detectors[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021417

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    Paper Information

    Category: Research Articles

    Received: Dec. 26, 2021

    Accepted: --

    Published Online: Apr. 18, 2022

    The Author Email: ZHANG Shu-Kui (zhangshukui@ucas.ac.cn), WANG Jian-Lu (jianluwang@fudan.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2022.01.010

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