Chinese Physics B, Volume. 29, Issue 8, (2020)

Performance of beam-type piezoelectric vibration energy harvester based on ZnO film fabrication and improved energy harvesting circuit

Shan Gao... Chong-Yang Zhang, Hong-Rui Ao† and Hong-Yuan Jiang |Show fewer author(s)
Author Affiliations
  • School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
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    Figures & Tables(18)
    Schematic diagram of piezoelectric energy harvesting vibrator.
    Schematic diagram of SECE circuit.
    Schematic diagram of thyristor switch.
    Schematic diagram of ISECE circuit.
    Schematic diagram of spring–damping–mass vibration model.
    Surface topography of sputtered ZnO film under magnification factor of 8000.
    XRD spectrum of sputtered ZnO film.
    Schematic diagram of experimental setup.
    Experimental apparatus of whole energy harvester testing system.
    Plots of theoretical voltage output Uversus frequency f for four different thickness values of ZnO film.
    Plots of theoretical voltage output Uversus frequency f of ZnO film under four different external forces.
    Plots of theoretical output power Pversus resistance in SECE and ISECE circuits.
    Plots of experimental voltage output Uversus frequency f under three different forces.
    Experimental output power Pversus resistance R in SECE and ISECE circuits.
    • Table 1. Dimensions of piezoelectric components in vibrator.

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      Table 1. Dimensions of piezoelectric components in vibrator.

      Length/mmWidth/mmThickness/mm
      Steel beam80122
      Si substrate10100.625
      ZnO film880.30
    • Table 2. Specifications of components in ISECE circuit.

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      Table 2. Specifications of components in ISECE circuit.

      Circuit componentValue
      Cz0.4 μF
      C15 μF
      C21 μF
      L12 H
      L20.8 H
    • Table 3. Deposition parameters of ZnO film.

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      Table 3. Deposition parameters of ZnO film.

      Deposition parametersValues
      TargetZnO (99.99%)
      Substratesilica slice (110)
      Target-substrate distance50 mm
      Deposition time6.5 h
      Pressure Ar:O21.0 Pa 4 : 1
      Substrate temperature200 °C
      Sputtering power110 W
    • Table 4. Surface topography testing values of ZnO film.

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      Table 4. Surface topography testing values of ZnO film.

      ParameterValue
      Overall roughness/nm1.46
      Local maximum roughness/nm1.96
      Relatively intensity48
      Grain diameter/nm17.4
      Diffraction angle 2θ/(°)34.44
      Standard deviation0.01
      Full width at half maximum/(°)0.45
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    Shan Gao, Chong-Yang Zhang, Hong-Rui Ao, Hong-Yuan Jiang. Performance of beam-type piezoelectric vibration energy harvester based on ZnO film fabrication and improved energy harvesting circuit[J]. Chinese Physics B, 2020, 29(8):

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    Paper Information

    Received: Feb. 12, 2020

    Accepted: --

    Published Online: Apr. 29, 2021

    The Author Email: Ao Hong-Rui (hongrui_ao@hit.edu.cn)

    DOI:10.1088/1674-1056/ab8da1

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