Laser & Optoelectronics Progress, Volume. 58, Issue 7, 0723001(2021)

Simulation and Analysis of Light Extraction Efficiency of GaN-Based Flip Chip with Sidewall Roughness

Xue Wang*, Zhiyong Cui, Bing Wang, Kai Guo, Ruifei Duan, Yiping Zeng**, and Jinmin Li
Author Affiliations
  • Beijing Youwill Hitech Co., Ltd, Beijing 100083, China
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    Figures & Tables(10)
    Model of LED flip chip
    Ray tracing picture of LED flip chip model
    Process diagram of laser hidden cutting dot. (a) Sapphire side wall after laser hidden cutting; (b) hidden tangent point model; (c) cross-section model of hidden tangent points
    Variation curves of LEE with number of hidden cutting layers
    LEE curves of F 1-F 4 samples
    LEE curves of C 1-C 6 samples
    Schematic of sample. (a) Combination sample; (b) uniform sample
    Variation curves of LEE with number of hidden cutting layers in empty space
    • Table 1. Material thickness, absorption coefficient, refractive index and reflectance of each layer in model

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      Table 1. Material thickness, absorption coefficient, refractive index and reflectance of each layer in model

      ItemThickness (H) /μmAbsorptivity (A) /mm-1Refractive index (nReflectivity /%
      Sapphire100.001.67
      n layer4.0102.45
      MQW0.1102.45
      p layer0.2102.45
      Reflector1.00100
    • Table 2. Position of samples

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      Table 2. Position of samples

      SampleC 1C 2C 3C 4C 5C 6
      Distance(d) /μm10.07.04.02.01.50
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    Xue Wang, Zhiyong Cui, Bing Wang, Kai Guo, Ruifei Duan, Yiping Zeng, Jinmin Li. Simulation and Analysis of Light Extraction Efficiency of GaN-Based Flip Chip with Sidewall Roughness[J]. Laser & Optoelectronics Progress, 2021, 58(7): 0723001

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    Paper Information

    Category: Optical Devices

    Received: Jul. 3, 2020

    Accepted: Aug. 28, 2020

    Published Online: Apr. 25, 2021

    The Author Email: Wang Xue (wangxue@luan-uv.com), Zeng Yiping (zengyiping@htmocvd.com)

    DOI:10.3788/LOP202158.0723001

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