Laser & Optoelectronics Progress, Volume. 58, Issue 7, 0723001(2021)
Simulation and Analysis of Light Extraction Efficiency of GaN-Based Flip Chip with Sidewall Roughness
Fig. 1. Model of LED flip chip
Fig. 2. Ray tracing picture of LED flip chip model
Fig. 3. Process diagram of laser hidden cutting dot. (a) Sapphire side wall after laser hidden cutting; (b) hidden tangent point model; (c) cross-section model of hidden tangent points
Fig. 4. Variation curves of LEE with number of hidden cutting layers
Fig. 5. LEE curves of F 1-F 4 samples
Fig. 6. LEE curves of C 1-C 6 samples
Fig. 7. Schematic of sample. (a) Combination sample; (b) uniform sample
Fig. 8. Variation curves of LEE with number of hidden cutting layers in empty space
|
|
Get Citation
Copy Citation Text
Xue Wang, Zhiyong Cui, Bing Wang, Kai Guo, Ruifei Duan, Yiping Zeng, Jinmin Li. Simulation and Analysis of Light Extraction Efficiency of GaN-Based Flip Chip with Sidewall Roughness[J]. Laser & Optoelectronics Progress, 2021, 58(7): 0723001
Category: Optical Devices
Received: Jul. 3, 2020
Accepted: Aug. 28, 2020
Published Online: Apr. 25, 2021
The Author Email: Wang Xue (wangxue@luan-uv.com), Zeng Yiping (zengyiping@htmocvd.com)