Fig. 1. (Color online) Benchmarking sub-100-nm bilayer WSe₂ transistors (red ball) against the (a) Ionmax for 2D semiconductor transistors (b-P, b-As, b-AsP, MoS₂, MoS₂-0.7 nm, WSe₂-0.7 nm, WS₂, WS₂-0.7 nm, MoTe₂, GeAs, InSe, SnSe, ReS₂, PtSe₂, ZrSe₂, HfSe₂) andI_on of 2021 silicon transistor (black ball) reported in ITRS, and (b) the Ronmin (lowest on-state resistance) with those reported in the literature^[8]. Reproduced with permission from Springer Nature, copyright 2022.