Infrared and Laser Engineering, Volume. 35, Issue 4, 429(2006)

Shear strain in MBE grown CdTe films on Si(211) substrates

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    References(6)

    [1] [1] VARESI J B,BORNFREUND R E,CHILDS A C,et al.Fabricaionof high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″silicon substrates[J].Journal of Electronic Materials,2001,30:559.

    [2] [2] MARANOWSKI K D,PETERSON J M,JOHNSON S M,et al.MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays[J].Journal of Electronic Materials,2001,30:619.

    [3] [3] Million A,Dhar N K,Dinan J H.Heteroepitaxy of CdTe on{211}Si substrates by molecular beam epitaxy[J].Journal of Crystal Growth,1996,159:76.

    [4] [4] CAROL D,TAPFER L.Elastic lattice deformation of semiconductor heterostructures grown on arbitrarily oriented substrate surfaces[J].Phys Rev B,1993,48:2298.

    [5] [5] FEWSTER P F.X-ray Scattering from Semiconductors[M].London:Imperial College Press,2000.

    [6] [6] BO WEN D K,TANNER B K.High Resolution X-ray Diffractometry and Topography[M].London:Taylor & Francis Ltd,2001.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Shear strain in MBE grown CdTe films on Si(211) substrates[J]. Infrared and Laser Engineering, 2006, 35(4): 429

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    Paper Information

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    Received: Aug. 5, 2005

    Accepted: Oct. 20, 2005

    Published Online: Oct. 20, 2006

    The Author Email: (王元樟(1978-)男福建福州人博士生主要从事功能材料与)

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