[1] [1] ZHOU H. Ultra-Precision Machining Technology of Substrate Substrate［M］. Beijing: Science Press, 2014. (in Chinese)

[2] [2] WU J. The Research on CMP Machining Mechanism and Technology for Sapphire Wafer［D］. Hangzhou: Zhejiang University of Technology, 2012. (in Chinese)

[3] [3] WEN D H, HONG T, ZHANG K H, et al.. Dual-lapping process for sapphire crystal［J］. Opt. Precision Eng., 2009, 17(10): 2493-2498. (in Chinese)

[4] [4] MENG Q P. Study on High Efficiency and Ultra-precision Grinding Process and Machining Damage of Sapphire［D］. Dalian: Dalian University of Technology, 2009. (in Chinese)

[5] [5] HADER B, WEIS O. Superpolishing sapphire: a method to produce atomically flat and damage free surfaces［J］. Surface Science, 1989, 220(1): 118-130.

[6] [6] LIU D B, XU X M, ZHOU H, et al.. Study on distribution of subsurface damage on sapphire substrate after two-sided lapping［J］. China Mechanical Engineering, 2014, 25(19): 2568-2572. (in Chinese)

[7] [7] YOUNG H T, LIAO H T, HUANG H Y. Surface integrity of silicon wafers in ultra precision machining［J］. The International Journal of Advanced Manufacturing Technology, 2006, 29(3-4): 372-378.

[8] [8] SURATWALA T, WONG L, MILLER P, et al.. Sub-surface mechanical damage distributions during grinding of fused silica［J］. Journal of Non-Crystalline Solids, 2006, 352(52-54): 5601-5617.

[9] [9] LI J, GAO P, ZHU Y W, et al.. Research on subsurface damage after abrasives and fixed-abrasive lapping of K9 glass［J］. Key Engineering Materials, 2011, 487: 253-256.

[10] [10] WANG ZH, WU Y L, DAI Y F, et al.. Rapid detection of subsurface damage of optical materials in lapping process and its influence regularity［J］. Optics and Precision Engineering, 2008, 16(1): 16-21. (in Chinese)

[11] [11] LV D X, WANG H X, ZHANG W W, et al.. Subsurface damage depth and distribution in rotary ultrasonic machining and conventional grinding of glass BK7［J］. The International Journal of Advanced Manufacturing Technology, 2016, 86(9-12): 2361-2371.

[12] [12] YIN ZH W. Research on Mechanism of Crack Propagation of Sapphire Single Crystal under Vibration Conditions［D］. Harbin: Harbin Institute of Technology, 2014. (in Chinese)

[13] [13] KUMAR P, LEE J, LEE G, et al.. Low temperature wet etching to reveal sub-surface damage in sapphire substrates［J］. Applied Surface Science, 2013, 273: 58-61.

[14] [14] WANG J B, ZHU Y W, WANG J SH, et al.. Effect of lapping methods on subsurface damage depth of single crystal sapphire［J］. Journal of Synthetic Crystal, 2014, 43(5): 1099-1104, 1120. (in Chinese)

[15] [15] XU X M, LIU D B, ZHOU H, et al.. Double-substrate angle polishing to detect the damage on sapphire substrate body after double-grinding［J］. Modern Manufacturing Engineering, 2014(5): 118-123. (in Chinese)

[16] [16] ZHANG ZH B. Research on the Surface Shape Accuracy and Damage Control of Sapphire Wafer During Double-side Lapping［D］. Quanzhou: Huaqiao University, 2016. (in Chinese)

[17] [17] ZHANG Y. Research on High-efficiency and Low-damage Processing of Sapphire［D］. Dalian: Dalian University of Technology, 2015. (in Chinese)

[18] [18] CHANG Y P, HASHIMURA M, DORNFELD D A. An investigation of material removal mechanisms in lapping with grain size transition［J］. Journal of Biomolecular Screening, 2000, 122(3): 413-419.

[19] [19] LAMBROPOULOS J C, JACOBS S D, RUCKMAN J. Material removal mechanisms from grinding to polishing［J］. Ceramic Transactions, 1999, 102: 113-128.

[20] [20] BLACK D R, POLVANI R S, BRAUN L M, et al.. Detection of subsurface damage: studies in sapphire［J］.SPIE, 1997, 3060: 102-114.

[21] [21] RANDI J A, LAMBROPOULOS J C, JACOBS S D. Subsurface damage in some single crystalline optical materials［J］. Applied Optics, 2005, 44(12): 2241-2249.

[22] [22] XU L, GUO J, YU B J, et al.. Rapid detection on the thickness of sub-surface damage layer of silicon［J］. Journal of Mechanical Engineering, 2016, 52(11): 108-114. (in Chinese)

[23] [23] MA B, SHEN ZH X, ZHANG ZH, et al.. Fabrication and detection technique of fused silica substrate with extremely low subsurface damage［J］. High Power Laser and Particle Beams, 2010, 22(9): 2181-2185. (in Chinese)

[24] [24] NEAUPORT J, AMBARD C, CORMONT P, et al.. Subsurface damage measurement of ground fused silica parts by HF etching techniques［J］. Optics Express, 2009, 17(22): 20448-20456.

[25] [25] L H T, ZHANG W L, ZUO Y, et al.. Study on the dislocation of the sapphire crystal with chemical etching［J］. Semiconductor Technology, 2004, 29(4): 48-51. (in Chinese)

[26] [26] WU X F. Technics and Performances of Sapphire Crystals Grown by Edge-defined Film-fed Growth (EFG) Method［D］. Nanjing: Nanjing University of Aeronautics and Astronautics, 2015. (in Chinese)

[27] [27] SAMPURNO Y, SUDARGHO F, ZHUANG Y, et al.. Effect of cerium oxide particle sizes in oxide chemical mechanical planarization［J］. Electrochemical and Solid-State Letters, 2009, 12(6):H191-H194.

[28] [28] ZHU Y W, LI X L, WANG ZH K, et al.. Subsurface damage prediction for optical hard-brittle material in fixed abrasive lapping［J］. Opt. Precision Eng., 2017, 25(2): 367-374. (in Chinese)