Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance

Yuqi REN; Yunfan YUE; Sheng LI; Nianyao CHAI; Xiangyu CHEN; Zhongle ZENG; Fengyi ZHAO; Huan WANG; Xuewen WANG

doi:10.37188/OPE.20243219.2889

Optics and Precision Engineering, Volume. 32, Issue 19, 2889(2024)

Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance

Yuqi REN1...3, Yunfan YUE1,3, Sheng LI1,4, Nianyao CHAI1,4, Xiangyu CHEN1,3, Zhongle ZENG1,4, Fengyi ZHAO2, Huan WANG1,3, and Xuewen WANG1,24 |Show fewer author(s)

Author Affiliations

¹Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices， State Key Laboratory of Advanced Technology for Materials Synthesis and Processing， Wuhan University of Technology， Wuhan430070， China

²Foshan Xianhu Laboratory， Foshan58000， China

³School of Materials Science and Engineering， Wuhan University of Technology， Wuhan40070， China

⁴International School of Materials Science and Engineering， Wuhan University of Technology， Wuhan30070， China

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Fig. 1. Raman spectra of sample with femtosecond laser annealing

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Fig. 2. SEM images of sample surface under different fluences

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Fig. 3. Schematic diagram of I-V curve testing

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Fig. 4. I-V characteristics of sample with different laser fluences and scanning spacings

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Fig. 5. I-V characteristics of sample with different laser fluences and number of effective pulses

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Fig. 6. EDS map analysis of 4H-SiC before and after laser annealing

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Fig. 7. XPS spectra of 4H-SiC samples before and after annealing treatment

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Table 1. Parameters of 4H-SiC
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Table 1. Parameters of 4H-SiC
参数样品标准
样品尺寸/mm 10×10
厚度/μm 500±25
晶片方向 On axis：<0001>±5°
表面粗糙度双抛CMP R_a≤0.5 nm
电阻率 0.02~0.1 Ω·cm

Table 2. Experimental setup for femtosecond laser annealing

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Table 2. Experimental setup for femtosecond laser annealing

仪器/设备名称	型号（生产厂家）
飞秒激光器	Pharos（Light Conversion）
场发射扫描电镜附加X-Max N80能谱仪	JSM-7500F
共聚焦拉曼光谱仪	Alpha300R（WITec）
X射线光电子能谱仪	AXIS SUPRA
霍尔效应测试仪	HMS-7000

Table 3. Hall testing of 4H-SiC before and after annealing

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Table 3. Hall testing of 4H-SiC before and after annealing

参数	退火前	退火后
温度/K	300	300
电导率/（S·m^-1）	1.71×10^-4	0.56×10¹
迁移率/（cm·（V^-1·S^-1））	1.97	1.99
载流子浓度（1/cm^-3）	5.40×10¹³	1.77×10¹⁸
霍尔系数/（cm^-3·C^-1）	-1.15×10⁵	-3.52

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Yuqi REN, Yunfan YUE, Sheng LI, Nianyao CHAI, Xiangyu CHEN, Zhongle ZENG, Fengyi ZHAO, Huan WANG, Xuewen WANG. Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance[J]. Optics and Precision Engineering, 2024, 32(19): 2889

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