Enhancing the electrical contact properties between SiC and metal interfaces is crucial for advancing SiC materials in high-frequency and high-power devices. This study utilized a 1030 nm near-infrared femtosecond laser to anneal the 4H-SiC surface， analyzing the effects of various laser annealing parameters. We examined changes in surface morphology， element distribution， and bonding structure of the laser-annealed samples using scanning electron microscopy， X-ray photoelectron spectroscopy， confocal Raman spectroscopy， and other methods. The study revealed that improvements in electrical properties at the contact interface result from a disordered graphite structure and SiO_x/Si structure with oxygen vacancies created by laser annealing. This structure reduces the interface Schottky barrier height， enhances conductivity， and shifts the Fermi level of the 4H-SiC surface， significantly boosting interface electrical properties. Femtosecond laser annealing reduced the SiC interface Schottky barrier from 1.43 eV to 0.69 eV and increased the carrier concentration from 5.40×10¹³ cm^-3 to 1.77×10¹⁸ cm^-3， presenting a novel method for optimizing SiC interface electrical properties with ultrafast laser annealing.