High Power Laser Science and Engineering, Volume. 8, Issue 1, 010000e6(2020)

Rapid growth of a long-seed KDP crystal

Duanyang Chen1,2, Bin Wang1, Hu Wang1, Xiangyu Zhu3, Ziyuan Xu1, Yuanan Zhao1, Shenghao Wang1, Kaizao Ni1, Lili Zheng3, Hui Zhang4, Hongji Qi1, and Jianda Shao1
Author Affiliations
  • 1Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, China
  • 3School of Aerospace Engineering, Tsinghua University, Beijing100084, China
  • 4Department of Engineering Physics, Tsinghua University, Beijing100084, China
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    Figures & Tables(8)
    Long-seed KDP crystal with size $471~\text{mm}\times 480~\text{mm}\times 400~\text{mm}$.
    THG-oriented samples cut from the cuboid KDP-type crystal (left) and the long-seed KDP-type crystal (right).
    HRXRD pattern of the long-seed KDP crystal.
    Transmittance of the long-seed KDP crystal.
    LIDT of the long-seed KDP crystal.
    LID scattering image at $30~\text{J}/\text{cm}^{2}$ (3 ns, 355 nm).
    Morphology of the LID bulks in Figure 6.
    • Table 1. Fitting of different kinds of defects.

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      Table 1. Fitting of different kinds of defects.

      Defect typeFitted LIDTFitted density
      ($\text{J}/\text{cm}^{2}$ at 3 ns, 355 nm)($\text{mm}^{-3}$)
      Lowest LIDT 8.72 0.063
      Moderate LIDT 14.64 0.748
      Highest LIDT 23.72 2.644
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    Duanyang Chen, Bin Wang, Hu Wang, Xiangyu Zhu, Ziyuan Xu, Yuanan Zhao, Shenghao Wang, Kaizao Ni, Lili Zheng, Hui Zhang, Hongji Qi, Jianda Shao. Rapid growth of a long-seed KDP crystal[J]. High Power Laser Science and Engineering, 2020, 8(1): 010000e6

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    Paper Information

    Category: Research Articles

    Received: Sep. 24, 2019

    Accepted: Dec. 11, 2019

    Posted: Dec. 12, 2019

    Published Online: Feb. 20, 2020

    The Author Email:

    DOI:10.1017/hpl.2019.54

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