103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode

Yang Shi; Xiang Li; Mingjie Zou; Yu Yu; Xinliang Zhang

doi:10.1364/PRJ.495958

Photonics Research, Volume. 12, Issue 1, 1(2024)

103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode

Yang Shi^1、†, Xiang Li^2、†, Mingjie Zou¹, Yu Yu^1,3,5、*, and Xinliang Zhang^1,3,4,6、*

¹Wuhan National Laboratory for Optoelectronics & School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

²School of Mechanical Engineering and Electronic Information, China University of Geosciences, Wuhan 430074, China

³Optics Valley Laboratory, Wuhan 430074, China

⁴Xidian University, Xi’an 710126, China

⁵e-mail: yuyu@mail.hust.edu.cn

⁶e-mail: xlzhang@mail.hust.edu.cn

show less

Figures & Tables(5)

Fig. 1. (a) Structural schematic of the waveguide Ge PD with a U-shaped electrode. The cross section of the silicon waveguide is 500 nm×220 nm and the silicon taper is 40 μm in length. Al, aluminum; Si, silicon; SiO₂, silica. The equivalent circuit is shown including the transit time and RC parasitic parameters. The transit time is represented by the equivalent resistance Rt and the equivalent capacitance Ct. The RC parasitic parameters contain the junction capacitance Cj, series resistance RS, inductance Lp, and stray capacitance Cp as well as external load RL. (b) The top view of the conventional waveguide Ge PD with the parallel electrode. The dashed region represents RS. (c) The top view of the proposed PD with the U-shaped electrode. (d) The simulated RS versus LGe under two kinds of contact and corresponding reduction ratio of the series resistance. Reduction ratio=(RS,Parallel−RS,U-shaped)/RS,Parallel×100%. (e) The simulated bandwidth related to RS and on-electrode inductance Lp when Cj=16 fF.

Download full size

View in Article

Fig. 2. (a) The cross-section diagram of the PDs along the length direction. Si, silicon. (b) The microscope images of the fabricated PD with the U-shaped electrode. (c) The enlarged view of the active region and U-shaped electrode. (d) The measures I-V characteristics of the two kinds of PDs. (e) The measured photocurrent with the input optical power at −1 V. (f) The measured normalized S21 parameters of the PDs with U-shaped and parallel electrodes.

Download full size

View in Article

Fig. 3. Measured eye diagrams for 100/112/120 Gb/s OOK signals and 100/112/200 Gb/s PAM4 signals at −1 V.

Download full size

View in Article

Table 1. Extracted Parameters of the Electrical Elements
View table
View in Article
Table 1. Extracted Parameters of the Electrical Elements
Device $C_{j}$ (fF) $R_{S}$ (Ω) $L_{p}$ (pH) $C_{p}$ (fF) $R_{L}$ (Ω)
U-shaped 22.6 12.9 175.3 10.0 50
Parallel 24.0 20.1 217.3 10.3 50

Table 2. Literature Overview of the State-of-the-Art High-Speed Waveguide PDs Integrated on Silicon^a

View table

View in Article

Table 2. Literature Overview of the State-of-the-Art High-Speed Waveguide PDs Integrated on Silicon^a

Ref.	Type	Voltage (V)	$R$ (A/W)	$I_{D}$ (nA)	BW (GHz)	RBP ( $A \cdot W^{- 1} \cdot GHz$ )	$D^{*}$ ( $cm \cdot {Hz}^{1 / 2} {\cdot W}^{- 1}$ )
[23]	InP/InGaAs	−2	0.2	0.12	70	14	$1.61 \times 10^{9}$
[24]	${MoTe}_{2}$	−3	0.2	10–1000	24	4.8	$\sim 1.22 \times 10^{9}$
[25]	Graphene	−0.3	0.4	–	$> 40$	$\sim 16$	$\sim 1.5 \times 10^{9}$
[26]	Ge, lateral	−1	1.0	100	70	70	$1.77 \times 10^{9}$
[27]	Ge, lateral	−1	0.74	2.5	67	50	$6.78 \times 10^{9}$
[14]	Ge, lateral	−2	0.3	$< 200$	265	79.5	$\sim 2.37 \times 10^{8}$
[14]	Ge, lateral	−2	0.45	$< 100$	240	108	$\sim 5.03 \times 10^{8}$
[19]	Ge, vertical	−3	0.89	6.4	80	71.2	$1.33 \times 10^{10}$
[21]	Ge, vertical	−2	1.05	6.4	67	70	$1.44 \times 10^{10}$
[18]	Ge, vertical	−3	0.81	35	75	61	$4.84 \times 10^{9}$
This work	Ge, vertical	−1	0.95	1.3	103	98	$2.95 \times 1 0^{10}$

Tools

Get Citation

Copy Citation Text

Yang Shi, Xiang Li, Mingjie Zou, Yu Yu, Xinliang Zhang. 103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode[J]. Photonics Research, 2024, 12(1): 1

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Silicon Photonics

Received: May. 18, 2023

Accepted: Oct. 17, 2023

Published Online: Dec. 7, 2023

The Author Email: Yu Yu (yuyu@mail.hust.edu.cn), Xinliang Zhang (xlzhang@mail.hust.edu.cn)

DOI:10.1364/PRJ.495958

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Extracted Parameters of the Electrical Elements

Table 1. Extracted Parameters of the Electrical Elements

Table 2. Literature Overview of the State-of-the-Art High-Speed Waveguide PDs Integrated on Silicona

Table 2. Literature Overview of the State-of-the-Art High-Speed Waveguide PDs Integrated on Silicona

Table 2. Literature Overview of the State-of-the-Art High-Speed Waveguide PDs Integrated on Silicon^a

Table 2. Literature Overview of the State-of-the-Art High-Speed Waveguide PDs Integrated on Silicon^a