High Power Laser and Particle Beams, Volume. 36, Issue 6, 065001(2024)

Insulated gate bipolar transistor drive circuit of high pulse repetition precision solid state modulator

Xiuqian Shi1...2, Dayong He1,2,*, Fei Li1, Nan Gan1, Yajie Mu1, and Jingyi Li12,* |Show fewer author(s)
Author Affiliations
  • 1Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(13)
    System structure of adder topology solid-state modulator
    Equivalent circuit of adder topology solid-state modulator system
    Overall scheme of IGBT driving circuit
    Peripheral circuit of buck converter
    Gate drive circuit
    Protection circuit
    Schematic diagram for response testing
    Results of response testing
    Environment for driving IGBT capability testing
    Results of driving IGBT capability testing
    Desaturation protection test results
    Pulse waveform on load under different charging voltages
    • Table 1. Results of experiments

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      Table 1. Results of experiments

      rise time/nsfall time/nsturn-on delay time/nsturn-off delay time/nsturn-on jitter (STD)/psturn-on jitter (PK-PK)/ns
      output waveform of the driver board86.51352.562604.253510.0293002.174
      load waveform at 1 kV charging voltage504.585333.5961321.7931703.3217304.899
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    Xiuqian Shi, Dayong He, Fei Li, Nan Gan, Yajie Mu, Jingyi Li. Insulated gate bipolar transistor drive circuit of high pulse repetition precision solid state modulator[J]. High Power Laser and Particle Beams, 2024, 36(6): 065001

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    Paper Information

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    Received: Jan. 23, 2024

    Accepted: Mar. 12, 2024

    Published Online: Jun. 3, 2024

    The Author Email: He Dayong (hedy@ihep.ac.cn), Li Jingyi (jingyili@ihep.ac.cn)

    DOI:10.11884/HPLPB202436.240031

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