Journal of Infrared and Millimeter Waves, Volume. 40, Issue 1, 7(2021)

Reducing Voc loss in InGaAsP/InGaAs dual-junction solar cells

Hong-Bo LU1,2,3, Xin-Yi LI2、*, Ge LI2, Wei ZHANG2, Shu-Hong HU1, Ning DAI1、*, and Gui-Ting YANG2
Author Affiliations
  • 1State Key Laboratory of Infrared Physics,Shanghai Institute of Technology Physics of the Chinese Academy of Sciences,Shanghai 200083,China
  • 2State Key Laboratory of Space Power-sources,Shanghai Institute of Space Power-sources,Shanghai 200245,China
  • 3University of Chinese Academy of Sciences,Beijing 100049,China
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    Figures & Tables(11)
    Cross-section of MOVPE stack containing three BSF/InGaAsP/BSF DHs.
    Cross-section of the InGaAsP/InGaAs double-junction solar cell structure.
    Element profiles (a) and PL decay curves (b) for InP-barrier and InAlAs-barrier DH1s.
    Overall SIMS results of (a) InP-barrier DH stack and (b) InAlAs-barrier DH stack.
    PL decay curves of (a) InP-barrier DHs and (b) InAlAs-barrier DHs.
    Steady-state PL of (a) InP-barrier DHs and (b) InAlAs-barrier DHs. Weak peaks marked by asteroids in DH1 and DH2 are related to the spacers.
    (a) Light J-V and (b) spectra response curves for InGaAsP/InGaAs solar cells using InP and InAlAs BSF layers
    Light J-V for InGaAsP/InGaAs DJSC using 5-period InP/InAlAs SL BSF layer.
    • Table 1. Previous reported results for InGaAsP/InGaAs DJSC

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      Table 1. Previous reported results for InGaAsP/InGaAs DJSC

      ReferenceMethodBandgapIllumination

      Jsc

      (mA/cm2)

      Voc

      (mV)

      Woc

      (mV)

      Oshima [2]MBE1.0/0.71AM1.5G13.15701140
      Wu [3]MBE1.05/0.73AM1.5G16.1830950
      Zhao [4]MOVPE1.07/0.74AM1.5D10.2977833
    • Table 2. Calculated surface recombination velocity at barrier/InGaAsP interface using Eq.. (3)

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      Table 2. Calculated surface recombination velocity at barrier/InGaAsP interface using Eq.. (3)

      Barrierm2 (m0)m1 (m0)ΔEc (meV)S (cm/s)
      InP0.080.0472305793
      InAlAs0.0750.0474600.738
    • Table 3. The effective minority-carrier lifetime of the DHs

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      Table 3. The effective minority-carrier lifetime of the DHs

      τeff (ns)DH1DH2DH3
      InP-barrier70.036.535.2
      InAlAs-barrier110.053.045.0
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    Hong-Bo LU, Xin-Yi LI, Ge LI, Wei ZHANG, Shu-Hong HU, Ning DAI, Gui-Ting YANG. Reducing Voc loss in InGaAsP/InGaAs dual-junction solar cells[J]. Journal of Infrared and Millimeter Waves, 2021, 40(1): 7

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    Paper Information

    Category: Research Articles

    Received: Apr. 16, 2020

    Accepted: --

    Published Online: Aug. 30, 2021

    The Author Email: LI Xin-Yi (lixy_sisp@163.com), DAI Ning (lixy_sisp@163.com)

    DOI:10.11972/j.issn.1001-9014.2021.01.002

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