Optoelectronics Letters, Volume. 20, Issue 1, 12(2024)

Fabrication and characterization of high-damage resis-tance Zn-diffused MgO: PPLN ridge waveguides

Xing CHENG1,2,3, Xinkai FENG2,3, Lei MA2,3, Jiaying CHEN2,3, Huaixi CHEN2,3、*, and Wanguo and LIANG2,3
Author Affiliations
  • 1College of Chemistry, Fuzhou University, Fuzhou 350108, China
  • 2Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350108, China
  • 3Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
  • show less

    This study investigates the fabrication process of Zn-diffused ridge waveguides in periodically poled magne-sium-doped lithium niobate (PPMgO: LN). A controlled variable method is used to study the effects of diffusion tem-perature, diffusion time, ZnO film thickness, and barrier layer thickness on the surface domain depolarization and wa-veguide quality of PPMgO: LN. A special barrier layer is proposed that can automatically lift off from the sample sur-face, which increases the depth of Zn doping and reduces the surface loss of the waveguide. By optimizing the process parameters, we fabricate Zn-diffused PPMgO: LN ridge waveguides with a length of 22.80 mm and a period of 18.0 μm. The above waveguides can make a second harmonic generation (SHG) at 775 nm with an output power of 90.20 mW by a pump power of 741 mW at 1 550 nm. The corresponding conversion efficiency is 3.160%/W?cm2, and the waveguide loss is approximately 0.81 dB/cm. These results demonstrate that high-efficiency devices can be ob-tained through the fabrication process described in this paper.

    Tools

    Get Citation

    Copy Citation Text

    CHENG Xing, FENG Xinkai, MA Lei, CHEN Jiaying, CHEN Huaixi, and LIANG Wanguo. Fabrication and characterization of high-damage resis-tance Zn-diffused MgO: PPLN ridge waveguides[J]. Optoelectronics Letters, 2024, 20(1): 12

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Received: Mar. 23, 2023

    Accepted: Jul. 26, 2023

    Published Online: May. 15, 2024

    The Author Email: Huaixi CHEN (hxchen@fjirsm.ac.cn)

    DOI:10.1007/s11801-024-3051-3

    Topics