[1] [1] WANG Li-jun. Academician WANG Li-jun: application of high power semiconductor laser in intelligent equipment manufacturing［J］. GuangDong Science & Technology, 2016, 17: 20-23.

[2] [2] CHEN Hong-da. Electronic information materials［J］. New Industrialization Straregy, 2015, 5(11): 34-70.

[3] [3] SUMPF B, FRICKE J, RESSEL P, et al. 100 000 h estimated lifetime of 100 μm-stripe width 650 nm broad area lasers at an output power of 1.2 W［C］. SPIE, 2012, 8277: 29.

[4] [4] SHIMADA N, OHNO A, ABE S, et al.High-power 625 nm AlGaInP laser diode［J］. IEEE Journal of Selected Topics in Quantum Electronics, 2012, 17(6): 1723-1726.

[5] [5] TADA H, SHIMA A, UTAKOJI T, et al. Uniform fabrication of highly reliable, 50~60 mW-class, 685 nm, window-mirror lasers for optical data storage［J］. Japanese Journal of Applied Physics, 1997, 36(5): 2666-2670.

[6] [6] LIN Tao, ZHANG Hao-qing, GUO En-min, et al. Study of N ions implantation induced quantum well intermixing in GaInP/AlGaInP quantum well structures［J］. Journal of Alloys and Compounds, 2015, 650: 336-341.

[7] [7] SUZUKI T, GOMYO A, IIJIMA S, et al. Band-gap energy anomaly and sublattice ordering in GaInP and AlGaInP grown by metalorganic vapor phase epitaxy［J］. Japanese Journal of Applied Physics, 1988, 27(11): 2098-2106.

[8] [8] YAMASHITA K, KITA T, WADA O, et al. Two-dimensional electron gas at Ga0.5In0.5P/GaAs heterointerface spontaneously induced by atomic ordering［J］. Physica E: Low-dimensional Systems and Nanostructures, 2002, 13(2-4): 329-332.

[9] [9] GORMAN B P, NORMAN A G, LUKIC R, et al. Effects of substrate orientation on the spontaneous ordering of GaAsSb epilayers grown by molecular beam epitaxy［J］. Mrs Proceedings, 2003, 794: 309-314.

[10] [10] LPEZ S Y, MORA-RAMOS M E, DUQUE C A. Calculation of direct and indirect excitons in GaAs/Ga1－xAlxAs coupled double quantum wells: Electric and magnetic fields and hydrostatic pressure effects［J］. Solid State Sciences, 2010, 12(2): 210-221.

[11] [11] MOWBRAY D J, HOGG R A, SKOLNICK M S, et al. Valence-band splitting in ordered Ga0.5In0.5P measured by polarized photoluminescence excitation spectroscopy［J］. Physical Review B, 1992, 46(11): 7232-7235.

[12] [12] YU Rong-wen, L Yi-jun, ZHENG Jian-sheng. Temperature dependence of disordered GaInP PL spectra ［J］. Chinese Journal of Luminescence, 1999, 20(1): 22-24.

[13] [13] L Yi-jun, YU Rong-wen, ZHENG Jian-sheng. Photoluminescence spectra of disordered and ordered GaInP2 ［J］. Journal of Xiamen University (Natural Science), 1999, 38(3): 362-365.

[14] [14] DONG Jian-rong, WANG Zhan-guo, LIU Xiang-lin, et al. Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy［J］. Applied Physics Letters, 1995, 67(11): 1573-1575.

[15] [15] GAO Yu-lin, L Yi-jun. Temperature dependence of photoluminescence spectrum of (AlxGa1x)0.51In0.49 ［J］. Semiconductor Optoelectronics, 2000, 21(4): 293-295.

[16] [16] LIU Xu, BAI Jing-jing, ZHANG Rong-xiang, et al. Effect of light soaking on photoluminescence quantum efficiency of CH3NH3PbI3 films［J］. Chinese Journal of Luminescence, 2017, 38(12): 1629-1635.

[17] [17] HAMADA H. Characterization of Gallium indium phosphide and progress of aluminum gallium indium phosphide system quantum-well laser diode［J］. Materials, 2017, 10(8): 875.