The temperature-dependent photoluminescence characteristics of the strained GaInP quantum well laser structure were studied in the paper. 9 nm Ga0.575In0.425P quantum wells were selected for the active region of the laser. N ion implanting and rapid thermal annealing at 730°C were used to induce quantum well intermixing in the active region. The photoluminescence characteristics at 10 K~300 K shows that the blue-shift of photoluminescence spectra at 300 K did not occur in the samples only subjected to rapid thermal annealing or N ions implantation. While for the sampels with the N ions implantation and annealing, blue-shift was found to be increased with the annealing time. Addtionally, the photoluminescence spectra of different samples differed greatly at low temperature conditions, both single and double peaks were observed in the photoluminescence spectra. The short wavelength peak in the double photoluminescence peaks was deduced to be caused by the recombination of intrinsic excitons, and the long wavelength peaks were deduced to be caused by the recombination between the electrons in order region and the holes in disordered region. This study can provide a new research idea for the relationship between long-term reliability and low temperature characteristics of semiconductor lasers.