Acta Optica Sinica, Volume. 37, Issue 3, 331001(2017)
Preparation of Al2O3 Dielectric Layers at Room Temperature Based on Flexible Displays
Aluminum oxide (Al2O3) thin films are prepared by radio frequency magnetron sputtering at room temperature, and the optimal control of the properties of these films is realized by adjusting the sputtering pressure. The prepared films with the best thickness uniformity are obtained under the sputtering power of 120 W and Ar pressure of 0.13 Pa, whose ratio of aluminum atoms to oxygen atoms is 1∶1.67, density is 3.21 g/cm3, and surface roughness is 0.62 nm. This smooth and compact Al2O3 thin film can significantly reduce the defects, and it also possesses the characteristics of high breakdown voltage, high relative dielectric constant and low leakage current. The flexible α-IGZO-TFTs are prepared on a polyimide (PI) substrate at room temperature by utilizing the optimized Al2O3 films as the gate insulation layer, and exhibit electrical performance with a mobility of 2.19 cm2/(V·s), an on/off current ratio of 105, a sub-threshold swing of 0.366 V/decade, and a threshold voltage of 3.01 V.
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Yao Rihui, Zheng Zeke, Zeng Yong, Hu Shiben, Liu Xianzhe, Tao Ruiqiang, Chen Jianqiu, Cai Wei, Ning Honglong, Xu Miao, Wang Lei, Lan Linfeng, Peng Junbiao. Preparation of Al2O3 Dielectric Layers at Room Temperature Based on Flexible Displays[J]. Acta Optica Sinica, 2017, 37(3): 331001
Category: Thin Films
Received: Sep. 14, 2016
Accepted: --
Published Online: Mar. 8, 2017
The Author Email: Rihui Yao (yaorihui@scut.edu.cn)