Fig. 1. Three-junction GaInP₂/GaAs/Ge cell sample

Fig. 2. Variation curves of voltage-current characteristics of the non-gate line part of a triple-junction GaInP₂/GaAs/Ge cell irradiated by laser

Fig. 3. Variation curves of power-voltage characteristics of the non-gate line part of a triple-junction GaInP₂/GaAs/Ge cell irradiated by laser

Fig. 4. Morphology changes of the non-gate line part of the triple junction GaInP₂/GaAs/Ge cell irradiated by nanosecond laser. (a) Original shape of the cell; (b)-(i) Morphology changes by laser irradiation when laser energy density is 3.3, 9.2, 19.4, 33.6, 66.5, 105.5, 129.5, 163.5 J·cm⁻²respectively

Fig. 5. [in Chinese]

Fig. 5. Electroluminescence changes of the non-gate line part of the triple junction GaInP₂/GaAs/Ge cell irradiated by nanosecond laser. (a) Electroluminescence results with no laser ablation; (b)-(h) Electroluminescence results by laser irradiation when laser energy density is 3.3, 19.4, 33.6, 66.5, 105.5, 129.5, 163.5 J·cm⁻²respectively

Fig. 6. Relative luminous intensity changes of the non-gate line part of the three-junction GaInP₂/GaAs/Ge cell irradiated by laser

Fig. 7. Variation curves of voltage-current characteristics of the gate line part of a triple-junction GaInP₂/GaAs/Ge cell irradiated by laser

Fig. 8. Variation curves of power-voltage characteristics of the gate line part of a triple-junction GaInP₂/GaAs/Ge cell irradiated by laser

Fig. 9. Morphology changes of the gate line part of the triple junction GaInP₂/GaAs/Ge cell irradiated by nanosecond laser with different laser energy densities

Fig. 10. Electroluminescence changes of the gate line part of the triple junction GaInP₂/GaAs/Ge cell irradiated by nanosecond laser. (a) Electroluminescence results with no laser ablation; (b)-(d) Electroluminescence results by laser irradiation when laser energy density is 3.3, 6.5, 105.5 J·cm⁻² respectively

Fig. 11. Relative luminous intensity changes of the gate line part of the three-junction GaInP₂/GaAs/Ge cell irradiated by laser