Journal of Semiconductors, Volume. 45, Issue 4, 042503(2024)
Improvement of Ga2O3 vertical Schottky barrier diode by constructing NiO/Ga2O3 heterojunction
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Fig. 1. (Color online) (a) XRD pattern, (b) rocking curve peak from the (400) plane, (c) absorption spectra, (d) surface SEM image, and the surface AFM of (e) 2D and (f) 3D image of β-Ga2O3 films.
Fig. 2. (Color online) (a) The schematic cross-sectional image for the vertical β-Ga2O3 SBD, (b) C−V characteristics of β-Ga2O3 SBD, and extracted Nd of inset.
Fig. 3. (Color online) Forward J−V characteristics of three different Ga2O3 SBDs in (a) linear and (b) logarithmic plots; (c) reverse J−V characteristics of Ga2O3 SBDs and (d) local enlargement from 0 to −15 V.
Fig. 4. (Color online) (a) The schematic cross-sectional image for the NiO/β-Ga2O3 HJD, (b) AFM image, (c) forward J−V characteristics, (d) reverse J−V characteristics of SBDs and HJDs.
Fig. 5. (Color online) Simulation results of the lateral electrostatic field for the β-Ga2O3 SBDs and NiO/β-Ga2O3 HJDs.
Table 1. The summary of electrical performances for β-Ga2O3 SBDs and HJDs.
View tableView in ArticleTable 1. The summary of electrical performances for β-Ga2O3 SBDs and HJDs.
Devices n ΦJ−V (eV) Vbi (V) Ron (Ω·cm2) Vbr (V) β-Ga2O3 SBDs: Au 3.9 0.67 1.59 0.12 31.5 β-Ga2O3 SBDs: Pd 3.0 0.70 1.52 0.09 30.8 β-Ga2O3 SBDs: Ni 3.5 0.56 1.47 0.11 33
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Xueqiang Ji, Jinjin Wang, Song Qi, Yijie Liang, Shengrun Hu, Haochen Zheng, Sai Zhang, Jianying Yue, Xiaohui Qi, Shan Li, Zeng Liu, Lei Shu, Weihua Tang, Peigang Li. Improvement of Ga2O3 vertical Schottky barrier diode by constructing NiO/Ga2O3 heterojunction[J]. Journal of Semiconductors, 2024, 45(4): 042503
Paper Information
Category: Articles
Received: Sep. 21, 2023
Accepted: --
Published Online: Jun. 21, 2024
The Author Email: Liu Zeng (ZLiu), Tang Weihua (WHTang), Li Peigang (PGLi)
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