Opto-Electronic Science, Volume. 2, Issue 5, 230005(2023)
31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure
[1] [1] Juntti M, Kantola R, Kyösti P, LaValle S, De Lima C M et al. Key drivers and research challenges for 6g ubiquitous wireless intelligence. (2019).
[16] [16] Lin RL, Chen YF. Equivalent circuit model of light-emitting-diode for system analyses of lighting drivers. In2009 IEEE Industry Applications Society Annual Meeting: 1–5 (IEEE, 2009); http://doi.org/10.1109/IAS.2009.5324876.
[18] [18] Baureis P. Compact modeling of electrical, thermal and optical LED behavior. InProceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005: 145–148 (IEEE, 2005); http://doi.org/10.1109/ESSDER.2005.1546606.
[30] [30] Linnartz JPMG, Deng X, Alexeev A, van Voorthuisen P. An LED communication model based on carrier recombination in the quantum well. In2021 IEEE 32nd Annual International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC): 1–6 (IEEE, 2021); http://doi.org/10.1109/PIMRC50174.2021.9569261.
[34] [34] Wu XM. Study on the luminescence properties of V-pit-containing GaN based blue LEDs on Si substrates (Nanchang University, Nanchang, 2014).
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Zengyi Xu, Wenqing Niu, Yu Liu, Xianhao Lin, Jifan Cai, Jianyang Shi, Xiaolan Wang, Guangxu Wang, Jianli Zhang, Fengyi Jiang, Zhixue He, Shaohua Yu, Chao Shen, Junwen Zhang, Nan Chi. 31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure[J]. Opto-Electronic Science, 2023, 2(5): 230005
Category: Research Articles
Received: Apr. 5, 2023
Accepted: Jul. 16, 2023
Published Online: Sep. 21, 2023
The Author Email: Chi Nan (nanchi@fudan.edu.cn)