Infrared and Laser Engineering, Volume. 53, Issue 10, 20240243(2024)
Study on the electrical properties of superlattice influenced by the thickness of GaSb substrate
Fig. 5. Structure diagram of n doped InAs/GaSb type Ⅱ superlattice film
Fig. 6. Structure diagram of p doped InAs/GaSb type Ⅱ superlattice film
Fig. 7. (a) The electrical characteristics of n doped InAs/GaSb type Ⅱ superlattice film, it indicates that the change of carrier concentration with different thinkness of GaSb substrate; (b) The electrical characteristics of n doped InAs/GaSb type Ⅱ superlattice film, it is the change of mobility with different thinkness of GaSb substrate
Fig. 8. The electrical characteristics of p doped InAs/GaSb type Ⅱ superlattice film. (a) indicates that the change of carrier concentration with different thinkness of GaSb substrate; (b) is the change of mobility with different thinkness of GaSb substrate
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Shupei JIN, Yunong HU, Peng ZHOU, Ming LIU. Study on the electrical properties of superlattice influenced by the thickness of GaSb substrate[J]. Infrared and Laser Engineering, 2024, 53(10): 20240243
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Received: Jun. 3, 2024
Accepted: --
Published Online: Dec. 13, 2024
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