Spectroscopy and Spectral Analysis, Volume. 42, Issue 4, 1179(2022)
Fine Photoluminescence Spectroscopic Characterization of Interfacial Effects on Emission Properties of InGaN/GaN Multiple Quantum Wells in a Blue-Light Laser Diode Structure
Fig. 1. PL spectra of sample H2-MQW and sample N2-MQW, recorded at room temperature with the 375 nm laser (5 μW), with fitted smooth lines to eliminate the oscillation pattern originating from thin-film interference
Fig. 2. (a) and (b) present the PL spectra of sample N2-MQW and sample H2-MQW, respectively, recorded at varied laser powers, and the insets depict how the PL spectra were smoothly fitted to eliminate oscillating interference pattern when taking the spectral data at 3.46 mW as examples; (c) exhibits the peak energy dependence of the PL spectra on the excitation power for the two samples, and (d) illustrates the spectral width dependence of their PL spectra on the excitation power
Fig. 3. Variation of the PL spectral characteristics of the H2-MQW and N2-MQW samples with respect to temperature
(a): Depicts the dependence of peak energy on temperature;(b): Depicts the dependence of integrated peak intensity on temperature (the solid lines are the fitting results obtained with the Arrhenius formula)
Fig. 4. The time-resolved PL spectra of the H2-MQW and N2-MQW samples recorded at (a) 4 K and (b) 300 K, respectively, with the measured wavelength set to the peak wavelength of the PL spectra at the corresponding temperatures. The spectra of the same temperature have been normalized, and the solid lines are the fittings to the decaying lifetimes
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Tao WANG, Jian-xun LIU, Xiao-tian GE, Rong-xin WANG, Qian SUN, Ji-qiang NING, Chang-cheng ZHENG. Fine Photoluminescence Spectroscopic Characterization of Interfacial Effects on Emission Properties of InGaN/GaN Multiple Quantum Wells in a Blue-Light Laser Diode Structure[J]. Spectroscopy and Spectral Analysis, 2022, 42(4): 1179
Category: Research Articles
Received: Jan. 30, 2021
Accepted: --
Published Online: Jul. 25, 2023
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