Raman tensor of AlN bulk single crystal: erratum

Wei Zheng; Ruisheng Zheng; Feng Huang; Honglei Wu; Fadi Li

doi:10.1364/PRJ.388479

Photonics Research, Volume. 8, Issue 3, 412(2020)

Raman tensor of AlN bulk single crystal: erratum

Wei Zheng¹, Ruisheng Zheng^2,4, Feng Huang^1、*, Honglei Wu², and Fadi Li³

¹State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China

²Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China

³Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

⁴e-mail: rszheng@szu.edu.cn

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References(1)

[1] W. Zheng, R. Zheng, F. Huang, H. Wu, F. Li. Raman tensor of AlN bulk single crystal. Photon. Res., 3, 38-43(2015).

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Wei Zheng, Ruisheng Zheng, Feng Huang, Honglei Wu, Fadi Li. Raman tensor of AlN bulk single crystal: erratum[J]. Photonics Research, 2020, 8(3): 412

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Paper Information

Category:

Received: Jan. 17, 2020

Accepted: --

Published Online: Feb. 28, 2020

The Author Email: Feng Huang (huangfeng@mail.sysu.edu.cn)

DOI:10.1364/PRJ.388479

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology