High Power Laser and Particle Beams, Volume. 32, Issue 4, 043201(2020)
Design and implementation of semiconductor multi-physical parallel computing program JEMS-CDS-Device
Fig. 4. Discontinuity heterogeneous interface and algorithm region processing (right figure, there are two logical nodes
Fig. 8. PN diode ’s density distribution of net doping and anode
Fig. 9. 2D NMOS equilibrium potential distribution comparison(potential unit: V, the potential reference zero is at infinity)
Fig. 10. Net doping and carrier distribution of 2D PN device (positive deviation 0.5 V)
Fig. 11. Input waveform and temperature distribution of PIN (at 7.78 ns)
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Guangrong Li, Zhenguo Zhao, Weijie Wang, Chunguang You, Haijing Zhou. Design and implementation of semiconductor multi-physical parallel computing program JEMS-CDS-Device[J]. High Power Laser and Particle Beams, 2020, 32(4): 043201
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Received: Jun. 25, 2019
Accepted: --
Published Online: Mar. 30, 2020
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