Photonics Research, Volume. 9, Issue 4, 535(2021)
High-speed silicon photonic Mach–Zehnder modulator at 2 μm
Fig. 1. Cross-sectional schematic diagram of the MZM’s active arms.
Fig. 2. (a) Mode analysis of a rib waveguide with 90 nm slab thickness; the inset is the quasi-TE mode profile; (b) simulated optical loss at wavelength of 1950 nm.
Fig. 3. (a) Loss performance under different PN junction offsets at the voltage of 0 V, 2 V, and 4 V; (b) relationship between
Fig. 4. Depletion width as a function of reverse bias. The inset is the distribution of electrons in the waveguide with a voltage of 0 V, 2 V, and 4 V, respectively.
Fig. 5. (a) Two-dimensional schematic diagram of T-shaped rail electrode structure; (b) electro-electro (EE)
Fig. 6. Simulated frequency dependent (a) microwave attenuation, (b) microwave index, (c) characteristic impedance, and (d) EO
Fig. 8. (a) Measured optical transmission and (b) phase shift as functions of reverse bias.
Fig. 9. Schematic diagram of the high-speed measurement setup. PD, photodetector; DSO, digital storage oscilloscope; AWG, arbitrary waveform generator; TDFA, thulium-doped fiber amplifier; PC, polarization controller.
Fig. 10. Eye diagram for MZM at data rate of 30 Gbit/s with OOK modulation.
Fig. 11. BER curves at different modulation rates. Inset: the offline post-FFE eye diagrams of 80 Gbit/s (left) and 60 Gbit/s (right) PAM-4 signals.
Fig. 12. Measured EO
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Xi Wang, Weihong Shen, Wenxiang Li, Yingjie Liu, Yong Yao, Jiangbing Du, Qinghai Song, Ke Xu, "High-speed silicon photonic Mach–Zehnder modulator at 2 μm," Photonics Res. 9, 535 (2021)
Category: Silicon Photonics
Received: Dec. 9, 2020
Accepted: Feb. 1, 2021
Published Online: Apr. 6, 2021
The Author Email: Jiangbing Du (dujiangbing@sjtu.edu.cn), Ke Xu (kxu@hit.edu.cn)