Infrared and Laser Engineering, Volume. 36, Issue 4, 439(2007)

Cryogenic characteristics of the infrared detector specific pre-amplifier

[in Chinese]1、*, [in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]2, and [in Chinese]3
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  • 1[in Chinese]
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    References(4)

    [5] [5] CLARK W F,El-Kareh B,PIRES R G,et al.Low temperature CMOS -a brief review[J].Components,Hybrids,and Manufacturing Technology IEEE Transactions,1992,15(3):397-404.

    [6] [6] PLUMMER J D.Low temperature CMOS devices and technology[C].Electron Devices Meeting,1986.

    [7] [7] FRIZE H G,RICHARD C J,YORKTOWN H,et al.Liquid Nitrogen Cooled CMOS[C].International Solid-State Circuits Conference,1986.

    [8] [8] KIRSCHMAN R K.Low-temperature electronics[J].Circuits and Devices Magazine,1990,6(2):12-24.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Cryogenic characteristics of the infrared detector specific pre-amplifier[J]. Infrared and Laser Engineering, 2007, 36(4): 439

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    Paper Information

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    Received: Dec. 10, 2006

    Accepted: Mar. 20, 2007

    Published Online: Feb. 18, 2008

    The Author Email: (赵毅强(1964-)男河北亲集人副教授博士主要从事集成电)

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