Ultrahigh-<i>Q</i> silicon racetrack resonators

Long Zhang; Lanlan Jie; Ming Zhang; Yi Wang; Yiwei Xie; Yaocheng Shi; Daoxin Dai

doi:10.1364/PRJ.387816

Photonics Research, Volume. 8, Issue 5, 684(2020)

Ultrahigh-Q silicon racetrack resonators On the Cover

Long Zhang¹, Lanlan Jie¹, Ming Zhang^1,2, Yi Wang¹, Yiwei Xie¹, Yaocheng Shi^1,2, and Daoxin Dai^1,2、*

¹State Key Laboratory for Modern Optical Instrumentation, Center for Optical & Electromagnetic Research, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310058, China

²Ningbo Research Institute, Zhejiang University, Ningbo 315100, China

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Fig. 1. Schematic configurations of the proposed ultrahigh-Q MRR. (a) 3D view and (b) top view.

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Fig. 2. (a) Cross section of the SOI waveguide. (b) Mode field distribution at a waveguide width W=1.6 μm. (c) Calculated transmission loss as the waveguide core width Wco increases with different mean deviation σ at the wavelength of 1550 nm.

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Fig. 3. (a) Calculated MERs of the TE modes at the SMWG–MWB junction as the radius Rmax varied when the TE0 mode is launched from the SMWG. Calculated light transmissions in the waveguide consisting of an input SMWG, a 180° Euler MWB, and an output SMWG when (b) Rmin=5 μm, (c) Rmin=10 μm, and (d) Rmin=15 μm. The insets show the simulated light propagation in the designed waveguide and the modal profile at the output port.

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Fig. 4. (a) Microscope images of the fabricated ultrahigh-Q resonator. (b) Zoom-in view of bent DC. Inset: Enlarged view of coupling region around R=Rmin. (c) Grating couplers for chip–fiber coupling.

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Fig. 5. (a) Measured spectral responses at the through port of the fabricated MRRs. (b) Enlarged view of the measured major fundamental mode resonance peak with the Lorentzian transmission matrix model fitted. (c) Enlarged view of the measured mode splitting.

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Table 1. Comparison of Ultrahigh-Q Silicon Photonic Resonators^a

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Table 1. Comparison of Ultrahigh-Q Silicon Photonic Resonators^a

Ref.	Type	Waveguide	Fabrication	$R_{eff}$ (μm)	FSR (nm)	Cross section	$Q_{load}$	$Q_{intrinsic}$	Loss (dB/cm)
[18]	All-pass	Ridge	Reflowing & oxidation	2450	0.043	$w_{r} = 2.05 μm$ $h_{r} = 0.22 μm$ $h_{s} = 1.00 μm$	$2.0 \times 10^{7}$	$2.2 \times 10^{7}$	0.0027
[15]	All-pass	Ridge	Double-etching	6000	0.017	$w_{r} = 3.0 μm$ $h_{r} = 0.13 μm$ $h_{s} = 0.09 μm$	$1.7 \times 10^{6}$	/	0.085 (straight part)
[16]	Add-drop	Ridge	Double-etching	$20 + 40$	0.208	$w_{r} = 2.00 μm$ $h_{r} = 0.13 μm$ $h_{s} = 0.09 μm$	$1.1 \times 10^{6}$	$3.2 \times 10^{6}$	0.21
[3]	Add-drop	Ridge	Double-etching	$20 + 50$	0.325	$w_{r} = 2.00 μm$ $h_{r} = 0.13 μm$ $h_{s} = 0.09 μm$	$1.1 \times 10^{6}$	$2.7 \times 10^{6}$	0.25
[17]	All-pass	Strip	Single-etching	450	0.160	$w_{r} = 3.00 μm$ $h_{r} = 0.22 μm$	$1.3 \times 10^{6}$	$2.2 \times 10^{6}$	0.3
This work	All-pass	Strip	Single-etching	29	0.900	$w_{r} = 1.60 μm$ $h_{r} = 0.22 μm$	$1.3 \times 10^{6}$	$2.3 \times 10^{6}$	0.3

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Long Zhang, Lanlan Jie, Ming Zhang, Yi Wang, Yiwei Xie, Yaocheng Shi, Daoxin Dai. Ultrahigh-Q silicon racetrack resonators[J]. Photonics Research, 2020, 8(5): 684

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