Photonics Research, Volume. 9, Issue 7, 1234(2021)
Modeling of a SiGeSn quantum well laser
Fig. 1. Modeled microdisk laser. (a) Schematic cross-section of the disk with labeled dimensions. (b) Strain across the layer stack, along a vertical axis near the periphery of the disk, where the optical field of whispering gallery ground modes is maximal. (c) Measured thresholds reported by Stange
Fig. 2. Flat-band energy diagram at 20 K. (a) Conduction band energy levels, with quantization levels in the wells (the gray curve shows the non-quantized
Fig. 3. Net gain as a function of pump power density. The experimentally determined thresholds are indicated by the vertical lines. (a) Lifetimes equal to 217 ps and 80 ps at 50 K and 100 K, respectively. Positive net gains equal to
Fig. 4. (a) Field profiles for the
Fig. 5. Carrier concentrations versus vertical position for (a)
Fig. 6. (a), (b) Electron and (d), (e) hole concentrations for each of the wells at (a), (d) 50 K and at the
Fig. 7. Gain at 50 K and 100 K, respectively, at
Fig. 8. Calculated absorption losses at 50 K and 100 K and at respective lasing thresholds
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Bahareh Marzban, Daniela Stange, Denis Rainko, Zoran Ikonic, Dan Buca, Jeremy Witzens. Modeling of a SiGeSn quantum well laser[J]. Photonics Research, 2021, 9(7): 1234
Category: Lasers and Laser Optics
Received: Dec. 2, 2020
Accepted: Mar. 30, 2021
Published Online: Jun. 16, 2021
The Author Email: Jeremy Witzens (jwitzens@iph.rwth-aachen.de)