Photodetection properties of van der Waals vertical heterostructures based on photogenerated carrier-dominated FN tunneling

Ping Liu; Wei Xu; Feng Xiong; Jinbao Jiang; Xianyan Huang; Zhihong Zhu

doi:10.3788/IRLA20230217

Infrared and Laser Engineering, Volume. 52, Issue 6, 20230217(2023)

Photodetection properties of van der Waals vertical heterostructures based on photogenerated carrier-dominated FN tunneling

Ping Liu1...2, Wei Xu1,2, Feng Xiong1,2, Jinbao Jiang1,2, Xianyan Huang1,2, and Zhihong Zhu12,* |Show fewer author(s)

Author Affiliations

¹College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China

²Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China

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Fig. 1. Structure and characterization of the graphene/MoS₂/h-BN/graphene vertical heterostructure photodetector device; (a) Schematic of the device structure; (b) Corresponding optical microscopy image and AFM characterization of the real fabricated heterostructure device; (c1), (c2) Raman spectra of MoS₂, graphene and h-BN

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Fig. 2. Photocurrent characteristics of the graphene/MoS₂/h-BN/graphene vertical heterostructure photodetector device. The I-V characteristics of the device under dark and 532 nm laser illumination with applied (a) negative bias and (b) positive bias; FN tunneling fitting curves of the device under dark and 532 nm laser illumination with applied (c) negative bias and (d) positive bias

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Fig. 3. Energy band diagrams of the graphene/MoS₂/h-BN/graphene heterostructure. (a) Energy band diagram of the device with zero bias. (b) Energy band diagrams of the device under dark and 532 nm laser illumination at V_ds < V_N-D-FN; (c) Energy band diagrams of the device under dark and 532 nm laser illumination at V_ds > V_P-D-FN

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Fig. 4. Optoelectronic properties of the graphene/MoS₂/h-BN/graphene vertical heterostructure device. (a) The I-V characteristics of the device under dark and 532 nm laser illumination with different power densities; (b) ln(I_ds/V²)–1/V_ds curves of the device under dark and 532 nm laser illumination with different power densities; (c) Power-dependent photocurrent of the device at V_ds = 6.75 V; (d) Responsivity and I_light/I_dark ratio along with illumination intensities

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Fig. 5. Comparison of the response time and cyclic stability between graphene/MoS₂/h-BN/graphene vertical heterostructure and graphene/MoS₂ heterostructure devices. (a) The dynamic temporal photoresponse of the graphene/MoS₂/h-BN/graphene heterostructure device with the enlarged current profile between 11 s and 16 s; (b) The dynamic temporal photoresponse of the graphene/MoS₂ heterostructure device with the enlarged current profile between 60 s and 100 s

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Table 1. The transition bias and barrier height of the graphene/MoS₂/h-BN/graphene vertical heterostructure photodetector device under 532 nm laser illumination
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Table 1. The transition bias and barrier height of the graphene/MoS₂/h-BN/graphene vertical heterostructure photodetector device under 532 nm laser illumination
V_N-D-FN/V φ_{h_Gra}/eV V_P-D-FN/V φ_{h_MoS²}/eV
BNM-14 −8.4 2.4 eV 5.3 1.6

Table 2. Comparison between the performances of typical vertical heterostructure photodetector devices

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Table 2. Comparison between the performances of typical vertical heterostructure photodetector devices

Device structure	Dark current/A	Response time/s	Laser wavelength/nm	Reference
Gra/h-BN/MoS₂/Gra	~10⁻¹²	~0.3	532	This work
Gra/MoS₂	~10⁻⁶	~20	532	This work
Gra/h-BN/MoS₂	~10⁻¹⁴	~0.25	405	[17]
Gra/h-BN/SnS₂	~10⁻¹²	~2	300	[18]
WSe₂/Gra/h-BN/MoS₂	~10⁻¹⁴	~0.4	532	[19]
Gra/MoS₂	~10⁻⁵	1.2	632.8	[21]
Gra/MoS₂ island	~10⁻⁵	1.5	632.8	[22]
Gra/MoS₂/Gra	~10⁻⁴	0.59	405-2 000	[23]

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Ping Liu, Wei Xu, Feng Xiong, Jinbao Jiang, Xianyan Huang, Zhihong Zhu. Photodetection properties of van der Waals vertical heterostructures based on photogenerated carrier-dominated FN tunneling[J]. Infrared and Laser Engineering, 2023, 52(6): 20230217

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Paper Information

Category: Mirco-nano optics

Received: Apr. 12, 2023

Accepted: --

Published Online: Jul. 26, 2023

The Author Email: Zhu Zhihong (zzhwcx@163.com)

DOI:10.3788/IRLA20230217

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. The transition bias and barrier height of the graphene/MoS2/h-BN/graphene vertical heterostructure photodetector device under 532 nm laser illumination

Table 1. The transition bias and barrier height of the graphene/MoS2/h-BN/graphene vertical heterostructure photodetector device under 532 nm laser illumination

Table 2. Comparison between the performances of typical vertical heterostructure photodetector devices

Table 2. Comparison between the performances of typical vertical heterostructure photodetector devices

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Table 1. The transition bias and barrier height of the graphene/MoS₂/h-BN/graphene vertical heterostructure photodetector device under 532 nm laser illumination

Table 1. The transition bias and barrier height of the graphene/MoS₂/h-BN/graphene vertical heterostructure photodetector device under 532 nm laser illumination